Interband and intersubband optical transition energies in a Ga0.7In0.3N/GaN quantum dot

We explore the variation of interband absorption spectra of GaAs spherical sector quantum dots (QDs) in response to a strong resonant laser, using the renormalized wave function method. Even though a spherical sector QD appears identical to a section cut from a spherical QD, it contains a controllable additional spatial parameter, the apical angle, which results in radically different wave functions and energy levels of particles, and is anticipated to exhibit novel optical properties. The obtained findings reveal that the apical angle of the dot has a considerable effect on the interband absorption spectrum. With the increase in the dot apical angle, a significant redshift of the interband absorption peaks has been identified. Increasing the pump laser detuning and dot radius yields similar results. Especially when a powerful resonant laser with tiny detuning is utilized, a dynamical coupling between electron levels arises, resulting in the formation of new interband absorption peaks. These new peaks and the former ones were similarly influenced by the aforementioned parameters. Furthermore, it is thought that the new peaks, when stimulated by a suitable laser, will produce the entangled states necessary for quantum information.

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“…The delta function,

, in Equation (20) can be replaced by a narrow Lorentzian by means of [ 65 ]:

where

is the phenomenological linewidth of the absorption peak.…”

Section: Theoretical Frameworkmentioning

confidence: 99%

A Theoretical Study of Interband Absorption Spectra of Spherical Sector Quantum Dots under the Effect of a Powerful Resonant Laser

et al. 2023

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“…Thus, the optical response in nanostructures is larger than bulk materials [2] that motivated researchers to investigate optical phenomena like optical absorption coefficients [3][4], Nonlinear Optical Rectification (NOR) [5][6], refractive index changes (RICs) [4,7,8], second [9][10][11] and third harmonic generation [12][13][14]. These nonlinear optical features are the basis of many modern optoelectronic devices, such as laser amplifiers [15], phototransistors [16], solar cell [17], laser diodes (Liu et al 2011) [18] infrared photodetector [19], optical switching [20]. Quantum dots known as artificial atoms are more like atoms than bulk materials because of their quantum mechanical behavior.…”

Section: Introductionmentioning

confidence: 99%

Tuning Absorption coefficient and refractive index changes in GaAs quantum ring Under Combined Effects of Temperature, Pressure, Rashba and Dresselhaus spin-orbit couplings

Hasanirokh

2023

Preprint

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In the present work, we have explored how the pressure, temperature and size of a GaAs quantum ring in the presence of Rashba and Dresselhaus spin–orbit couplings (SOC) can affect the energy states, dipole transition matrix elements (DTMEs), optical absorption coefficients (OACs) and refractive index changes (RICs). In addition to the theoretical beauty of this important and exciting area of research, it represents the attractive potential applications in the growth of optoelectronics devices. The results have indicated that the ground state energy values rise with pressure and Dresselhaus coupling. Meanwhile, increasing the temperature and Rashba coupling as well as the ring’s size leads to a decrement of energy levels. Taking the transition from the ground state to the first excited state, we have found that the temperature, pressure, inner and outer radius decrease DTMEs because of a drop in wave functions overlap. Therefore, the presence of SOCs, pressure, temperature and dimensions of the quantum ring dominate the electronic behavior and consequently control the absorption as well as the refractive index of the nano structure. A significant enhancement of the OACs and RICs curves is witnessed when the pressure, ring geometric, and Rashba strength are enlarged, but Increasing Dresselhaus coefficient decreases OACs and RICs. These parameters are responsible for blue shifts in the optical absorption. These results can be suitable in the construction of spin-based devices.

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Interband optical Raman gain in a strained oxide quantum dot with Hylleraas co-ordinates

Peter¹,

Karthikeyan²,

Lee

2020

Opt Quant Electron

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Interband and intersubband optical transition energies in a Ga0.7In0.3N/GaN quantum dot

Cited by 9 publications

References 29 publications

A Theoretical Study of Interband Absorption Spectra of Spherical Sector Quantum Dots under the Effect of a Powerful Resonant Laser

A Theoretical Study of Interband Absorption Spectra of Spherical Sector Quantum Dots under the Effect of a Powerful Resonant Laser

Tuning Absorption coefficient and refractive index changes in GaAs quantum ring Under Combined Effects of Temperature, Pressure, Rashba and Dresselhaus spin-orbit couplings

Interband optical Raman gain in a strained oxide quantum dot with Hylleraas co-ordinates

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