Donor ion-implantation doping into SiC

Rao, Mulpuri V.; Tucker, Jesse B.; Holland, O. W.; Papanicolaou, N.; H., P.; Kretchmer, J.; Ghezzo, M.

doi:10.1007/s11664-999-0036-8

Cited by 22 publications

(9 citation statements)

References 22 publications

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“…SiC devices exhibit high output power, high-power density, and highfrequency capabilities. 5,6 Nitrogen is widely used because of the versatility associated with its low atomic mass. Nitrogen, phosphorus, arsenic, and antimony are the possible donors in SiC, with comparable ionization energies.…”

Section: Introductionmentioning

confidence: 99%

Variable-dose (1017–1020 cm−3) phosphorus ion implantation into 4H–SiC

Handy

Rao

Holland

et al. 2000

Journal of Applied Physics

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Articles you may be interested inFluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC J. Appl. Phys. 97, 033513 (2005); 10.1063/1.1844618 Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H-SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis J. Appl. Phys. 91, 6388 (2002); 10.1063/1.1469204 High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H-SiC Appl.Multiple-energy box profile elevated-temperature ͑700°C͒ phosphorus ion implantations were performed into 4H-SiC in the doping range of 1ϫ10 17 -1ϫ10 20 cm Ϫ3 . The implanted material was annealed at 1500, 1600, or 1650°C with an AIN encapsulant to prevent degradation of the SiC surface. Within this temperature range the sheet resistance does not change significantly for a given dose. The percentage of electrical activation of the P donors initially decreased with increasing implant dose for P-implant concentration up to 3ϫ10 19 cm Ϫ3 and then increased again at higher doses. For 1ϫ10 20 cm Ϫ3 P implant, a carrier concentration of 4ϫ10 19 cm Ϫ3 was measured at room temperature. In the 10 17 cm Ϫ3 P doping concentration range substitutional activation greater than 85% was measured. Despite performing the implants at 700°C, a significant amount of as-implanted damage was observed in the Rutherford backscattering ͑RBS͒ spectrum, even for 10 18 cm Ϫ3 range P implantations. The RBS yield after annealing is near the virgin level for P concentrations up to 1ϫ10 19 cm Ϫ3 , but above this concentration the RBS yield is above the virgin level, indicating a significant amount of residual lattice damage in the crystal.

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Section: Introductionmentioning

confidence: 99%

Variable-dose (1017–1020 cm−3) phosphorus ion implantation into 4H–SiC

Handy

Rao

Holland

et al. 2000

Journal of Applied Physics

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“…Al or N impurities are the best for p or n-type doping in SiC [39,40]. Therefore, we choose to implant them into SiC to introduce free holes/electrons, which can also realize defect-induced ferromagnetism at the same time.…”

Section: Resultsmentioning

confidence: 99%

Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

et al. 2017

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“…Donor ions (such as N and P) implanted 4H-SiC have been researched extensively and achieved a high activity ratio due to their low ionization energies and ease of electrical activation in 4H-SiC [3]- [4]. There are also several reports on acceptor dopants (such as AI, B and Ga) [5]- [6] implantation into 4H-SiC, but more work needs to be done.…”

Section: Introductionmentioning

confidence: 99%

Annealing effects on structural, optical and electrical properties of Al implanted 4H-SiC

Zhang

Huang²,

Hong³

et al. 2009

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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Effects of AI ions implantation into n-type 4H-SiC followed by annealing at various temperatures have been studied by Atomic Force Microscopy (AFM) , Raman scattering, Fourier transform infrared (FTIR) reflectance spectroscopy, and Hall effect measurements. AFM experiments observed a large amount of discontinuous strips on 4H-SiC surface running along three directions after high temperature annealing. Raman scattering and FTIR spectra jointly indicated the damage and amorphization of 4H-SiC due to AI implantation and the crystal restoration after high temperature annealing. Hall effect measurements revealed that the sample annealed at 1600°C achieved a higher activity ratio and a lower resistivity, which satisfied the application of numerous SiC-based devices .

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Donor ion-implantation doping into SiC

Cited by 22 publications

References 22 publications

Variable-dose (1017–1020 cm−3) phosphorus ion implantation into 4H–SiC

Variable-dose (1017–1020 cm−3) phosphorus ion implantation into 4H–SiC

Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

Annealing effects on structural, optical and electrical properties of Al implanted 4H-SiC

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