Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing

Abstract

Pileup of boron atoms near the maximum melt depth in bulk silicon and silicon-on-insulator (SOI) substrates upon laser annealing (LA) was studied. The results show that boron atoms accumulate near the maximum melt depth in shallow melting and increases with increasing laser pulses. The pileup is found to be related to the recrystallization behavior of the melted silicon during LA and occurs at a recrystallization transient, RT0, of about 10nm from the maximum melt depth in both SOI and bulk silicon substrates. An abrupt recrystallization process in preamorphized silicon, on the other hand, suppresses the formation of the boron pileup during LA.

Modification of materials to decrease of quantity of radiation defects in an implanted-heterojunction rectifier

“…To decrease the quantity of radiation defects some approaches (such as different types of annealing (Lachin and Savelov 2001;Gotra 1991;Bykov et al 2003;Ong et al 2006;Ahlgren et al 1997;Noda 2003), annealing in combination with multistage ion implantation (Pankratov and Bulaeva 2011)) could be used. In this paper we consider a H, which consist of substrate and porous epitaxial layer.…”

“…It is attracted an interest increasing sharpness of p-n-junctions, and at the same time increasing homogeneity of dopant distribution in enriched by the doped area. To increase the sharpness of p-n-junction, laser (Bykov et al 2003) or microwave (Ong et al 2006) types of annealing of dopant (for diffusion-junction rectifiers) or radiation defects (for implanted-junction rectifiers) and inhomogenous distribution of defects in doped sample or heterostructure (H) could be used. In the works of Pankratov (2008aPankratov ( , 2010a we consider an alternative approach to increase sharpness of implanted-junction rectifiers and at the same time to increase homogeneity of dopant distribution in doped area.…”

On Approach to Optimize Manufacturing of a Transistors with Two Sources to Decrease their Dimensions

“…One can also find increasing of speed of functioning of these elements. Dimensions of these elements could be decreased by laser or microwave types annealing of the considered dopants [1][2][3]. These types of annealing leads to inhomogeneity of diffusion coefficient and another parameters of processes due to inhomogenous distribution of temperature and Arrhenius law.…”

Modeling boron profiles in silicon after pulsed excimer laser annealing

“…Boron redistribution in silicon during LTA was investigated by Monakhov et al [4] using a 308 nm XeCl excimer laser with a pulse duration of 28 ns and by Ong et al [5] using a 248 nm KrF excimer laser with a pulse duration of 23 ns. In both investigations, the boron profiles in silicon show a depletion near the sample surface and a build-up at the initial liquid/solid interface in silicon.…”

“…Ong et al [5] conducted an experiment which is particularly relevant for model development. After a first laser shot with a high energy density, resulting in a nearly flat dopant profile, they annealed the sample for a second time with the maximum melt depth located in the flat region.…”