Dopant‐Free Twinning Superlattice Formation in InSb and InP Nanowires

Abstract

Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III–V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au‐catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III–V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering.

From MoO2@MoS2 Core–Shell Nanorods to MoS2 Nanobelts

“…Raman spectra, Raman mappings, and PL spectra were collected with WITec alpha 300 Raman microscope using 532 nm excitation with a laser power of 1 mW. The TEM, HRTEM, EDS, and SAED were recorded by a JEOL 2100 microscope, on transferred individual nanorod …”

“…The TEM, HRTEM, EDS, and SAED were recorded by a JEOL 2100 microscope, on transferred individual nanorod. [27]…”

Mechanical Behavior of InP Twinning Superlattice Nanowires

“…The InP TSL nanowires were grown by Au-seeded vapor-liquid-solid mechanism in a metalorganic vapor phase epitaxy reactor (MOVPE, Aixtron 200/4) at 100 mbar and with a total gas flow rate of 15 litres per minute [42]. Trimethylindium (TMIn) and phosphine (PH 3 ) were used as precursors for In and P, respectively.…”

“…Then, Au droplets with a diameter of 30 nm were deposited on the treated InP(111)B substrates for 30 seconds, followed by cleaning using deionized water. After Au droplet functionalization, the substrates were loaded into the reactor and the InP nanowires with TSL structure were grown by using the reported approach [42]. Stable nanowire growth was initiated by pre-nucleation of the nanowires at 450 °C for 5 minutes.…”

Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires

“…The NWs were grown by Au-seeded NW growth method as detailed in our previous work. 39 WZ GaAs NWs were grown at 575 °C for one hour with trimethylgallium (TMGa) flow and V/III ratio of 2.03×10 -5 mol/min and 1.7, respectively. After that, Ga 0.5 In 0.5 P shell growth was carried out at 600 °C.…”