Dopant profile control and metrology requirements for sub-0.5 μm metal–oxide–semiconductor field-effect transistors

Duane, Michael; Nunan, Peter; Beek, M. ter; Subrahmanyan, R.

doi:10.1116/1.589032

Cited by 15 publications

(5 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…172 Extensions of the historical trends in dose uniformity requirements also predict real needs for dose control approaching 0.1% for critical applications of 0.25 m technology. The start of 0.25 m production is forecast for 1998, the same year as the introduction of 300 mm wafer fabs.…”

Section: Dose Control Issuesmentioning

confidence: 98%

See 1 more Smart Citation

Ion beams in silicon processing and characterization

Chason

Picraux

Poate

et al. 1997

Journal of Applied Physics

262

106

View full text Add to dashboard Cite

General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges.

show abstract

Section: Dose Control Issuesmentioning

confidence: 98%

“…172 Given the strong sensitivity of critical transistor parameters such as threshold voltage, subthreshold leakage current, and circuit speed ͑Fig. 56͒ with junction doping profiles, a few errant atoms can produce significant effects!…”

Section: Beam Divergence Effects On Lateral Junction Locationmentioning

confidence: 99%

Ion beams in silicon processing and characterization

Chason

Picraux

Poate

et al. 1997

Journal of Applied Physics

262

106

View full text Add to dashboard Cite

show abstract

“…8 It was shown that a concentration resolution of 3E16/cm 3 and position resolution of 5 nm is needed for predictive simulations. These values were confirmed in a more recent analysis.…”

Section: Simulation Resultsmentioning

confidence: 99%

Metal–oxide–semiconductor field-effect transistor junction requirements

Duane

Lynch

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

Articles you may be interested inSample size requirements for estimating effective dose from computed tomography using solid-state metaloxide-semiconductor field-effect transistor dosimetry Med. Phys. 41, 042102 (2014); 10.1118/1.4868693Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor Electron holography analysis of a shallow junction for planar-bulk metal-oxide-semiconductor field-effect transistors approaching the scaling limit Influence of dislocations in strained Si ∕ relaxed SiGe layers on n + ∕ p -junctions in a metal-oxide-semiconductor field-effect transistor technology Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistorsThe detailed requirements for shallow junctions for deep sub-micron metal-oxide-semiconductor field-effect transistors are reviewed and explained. The National Technology Roadmap for Semiconductors lists the concentration and depth requirements for the next several generations of technology, but does not provide detailed explanation of the electrical requirements that drive these physical junction characteristics. There are actually many more constraints on junction formation in an integrated complimentary metal-oxide-semiconductor flow, e.g., the effect of the junction formation on the channel region, which can include poly depletion, boron penetration, and reverse short channel effects. The guidelines presented here should be useful to researchers developing ultrashallow junction processes or measurement techniques.

show abstract

“…It has been shown that the device parameters are extremely sensitive to shifts in junction position and variations in carrier concentration. 1 The carrier profile therefore needs to be determined with nanometer precision and resolution. Furthermore, failure analysis on structures under investigation and the calibration of process and device simulators becomes an important issue and also requires tools which enables one to carry out carrier profiling on a nanometer scale.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and use of metal tip and tip-on-tip probes for AFM-based device analysis

et al. 1998

View full text Add to dashboard Cite

Different techniques based on the atomic force microscope (AFM) have been developed in the last few years for the electrical characterization of semiconductor devices. The quality of these measurements strongly depends on the tip which should not only have a small radius of curvature but also a high electrical conductivity. Therefore, the choice of metal as tip material is obvious. We have developed a process scheme for the fabrication of pyramidal metal tips which are integrated into a silicon cantilever. This paper discusses this process in detail and shows how the transition was made from prototyping to batch fabrication using standard 150 mm silicon wafer technology. Results are presented concerning the application of such probes for two-dimensional carrier profiling of InP and silicon structures using scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). A novel tip configuration called tip-on-tip has also been developed. This concept looks promising for future applications. We demonstrate how such a tip-on-tip configuration can be realized.

show abstract

Dopant profile control and metrology requirements for sub-0.5 μm metal–oxide–semiconductor field-effect transistors

Cited by 15 publications

References 0 publications

Ion beams in silicon processing and characterization

Ion beams in silicon processing and characterization

Metal–oxide–semiconductor field-effect transistor junction requirements

Fabrication and use of metal tip and tip-on-tip probes for AFM-based device analysis

Contact Info

Product

Resources

About