Dopant profile engineering using ArF excimer laser, flash lamp and spike annealing for junction formation

Advances in ultrashallow doping of silicon

“…ArF excimer laser with pulse energy density varies from 300 to 600 mJ/cm 2 was used for the annealing of boron ion-implanted silicon. B-implanted samples annealed at 400 mJ/cm 2 for 32 pulses per point exhibit an ultrahigh abruptness of 2.5 nm/dec at the amorphous/ crystalline interface [62]. Figure 11.…”

“…Annealing technique is another hot topic in the research of ultra-shallow doping. The desire to maximize dopant activation with minimized diffusion in USJ fabrication has reignited the research interests in subsecond annealing techniques such as FLA [61][62][63][64] and PLA [62,[65][66][67][68][69] that were first proposed in late 1970s [70,71].…”

“…annealed ion-implanted sample [62]. ArF excimer laser with a wavelength of 193 nm and a duration of 25 ns was used by A. Scheit et al The experimental wafer was first pre-amorphized with germanium ion-implantation, followed by ion-implantation of either boron or arsenic.…”