Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters

Laven, Johannes G.; Schulze, Hans‐Joachim; Häublein, V.; Niedernostheide, F.‐J.; Schulze, Holger; Ryssel, H.; Frey, L.

doi:10.1002/pssc.201000161

Cited by 19 publications

(25 citation statements)

References 13 publications

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“…The HD concentration depends linearly on the proton fluence for successive anneals at temperatures around 350°C, whereas after annealing at temperatures around 470°C a square-root dependence of the HD concentration on the fluence is observed (15,16). This behavior may be explained qualitatively by the appearance of two different types of HDs in the proton-implanted samples.…”

Section: Introductionmentioning

confidence: 70%

“…The initial concentration of the less stable donor species HD1 surpasses that of the more stable species HD2 in this case. The concentration of the donor species HD1 is known to increase about linearly with the proton fluence, while the species HD2 exhibits a square root dependence on the proton fluence (15). Thus, the relative concentration of the two species is also dependent on the implantation parameters.…”

Section: Thermal Dissociation Of the Hdsmentioning

confidence: 97%

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(Invited) The Thermal Budget of Hydrogen-Related Donor Profiles: Diffusion-Limited Activation and Thermal Dissociation

et al. 2013

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The impact of the thermal budget on hydrogen-related donor profiles in high purity silicon implanted with protons in the energy range of MeV is investigated. The appearance of the donor profiles is limited to the annealing temperature regime between about 350°C and 500°C. The activation of the doping profiles is limited by the diffusion of the implanted hydrogen from the end-of-range region throughout the radiation-induced damage. This formation process of the profiles is adequately described by a diffusion model with an effective activation energy of 1.2 eV. The hydrogenrelated donors are radiation-induced defect complexes decorated by the implanted hydrogen. The thermal stability of these donors is limited by their dissociation. The deactivation of the doping is modeled by two hydrogen-related donor species with effective dissociation energies of 2.5 eV and 3 eV. The formation and dissociation mechanisms described in the present study define the upper and lower limits of the post-implantation thermal budget, respectively, for the sensible use of proton implantation doping in crystalline Silicon.

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Section: Introductionmentioning

confidence: 70%

Section: Thermal Dissociation Of the Hdsmentioning

confidence: 97%

(Invited) The Thermal Budget of Hydrogen-Related Donor Profiles: Diffusion-Limited Activation and Thermal Dissociation

et al. 2013

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“…The diffusion of the hydrogen through the region damaged by its implantation was recently characterized by the effective activation energy of 1.22 eV (14). In contrast to those samples irradiated only with protons, the relation between the damage concentration in the penetrated region and the sheet concentration of inserted hydrogen is varied by the additive helium implantation in the present analyses.…”

Section: Resultsmentioning

confidence: 98%

The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon

Laven¹,

Job²,

Schulze³

et al. 2010

ECS Trans.

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Doping profiles in proton and helium co-implanted and annealed n-type float zone silicon wafers are analyzed by means of spreading resistance measurements. After annealing at sufficiently high temperatures and/or long-enough duration, the hydrogen-related donor profiles known from proton implantations are significantly enhanced by the helium irradiation. The resulting profile shape exhibits a strong resemblance to the radiation damage distribution of the co-implantation. By increasing the ultimately introduced number of hydrogen related donors without varying the available amount of hydrogen, it is shown that the donor profile resulting from proton implantation and annealing is limited by the defect species and the implanted hydrogen is supplied in surplus. The maximum of the additionally induced donor distribution by the helium implantation shows a different dependency on the fluence compared to the donor maximum induced by mere proton irradiation. The diffusion of the implanted protons through the irradiated layer during annealing is clearly impacted by the helium irradiation.

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“…These defects lead to a typeconversion of the originally n-type high resistivity FZ Si into p-type conductivity. During the annealing step, the hydrogen diffuses through the irradiated region towards the surface [11]. Where hydrogen and radiation damage coincide, HDs are created and the doping is again inverted to n-type.…”

Section: Resultsmentioning

confidence: 99%

“…The damage profile generated by the irradiation with protons in the energy range of MeV extends to several 10 µm to 100 µm below the surface, while the majority of the implanted protons come to rest around their projected range near the end of the damage profile. During the successive annealing step, the implanted hydrogen must be allowed to diffuse through the damaged layer in order for the donor profile to fully extend towards the surface [11].…”

Section: Introductionmentioning

confidence: 99%

Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

Laven

Schulze²,

Häublein

et al. 2011

AIP Conference Proceedings

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Composition change of stainless steel during microjoining with short laser pulse J. Appl. Phys. 96, 4547 (2004) Elemental surface analysis at ambient pressure by electron-induced x-ray fluorescence Rev. Sci. Instrum. 74, 1251 (2003 Nondestructive analysis of ultrashallow junctions using thermal wave technology Rev. Sci. Instrum. 74, 586 (2003) Images of dopant profiles in low-energy scanning transmission electron microscopy Appl. Phys. Lett. 81, 4535 (2002) Spreading-resistance profiling of silicon and germanium at variable temperature J. Appl. Phys. 92, 4809 (2002) Additional information on AIP Conf. Proc. Abstract. The impact of dose variations of protons implanted with energies in the MeV range on the concentration and depth distribution of hydrogen-related shallow donors in float zone and Czochralski silicon after annealing at 470 °C is examined with spreading resistance probe measurements. For moderate proton doses up to 10 14 cm -2 , the measured effective carrier distribution in float zone silicon correlates with the calculated distribution of the primary radiation damage caused by the penetrating protons. With increasing doses above 10 14 cm -2 , however, the effective carrier distribution significantly deviates from the distribution of the primary defects. Furthermore, the shape of the induced profiles in float zone and Czochralski silicon differ considerably. The effective carrier concentration at the maximum of the induced donor profile exhibits a linear dependency on the implanted dose after annealing around 370 °C, whereas this dependency becomes clearly sublinear when annealing at 470 °C. A temperature dependent model using two donor species is proposed which accounts for the different dose dependencies at the different annealing temperatures.

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Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters

Cited by 19 publications

References 13 publications

(Invited) The Thermal Budget of Hydrogen-Related Donor Profiles: Diffusion-Limited Activation and Thermal Dissociation

(Invited) The Thermal Budget of Hydrogen-Related Donor Profiles: Diffusion-Limited Activation and Thermal Dissociation

The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon

Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

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