Dopant redistribution and crystalline damage removal during rapid thermal annealing of Be and Mg implants in Ga0.47In0.53As

The activation kinetics and diffusion characteristics of Si+ and Be+ ions implanted into InAlAs and InGaAs were investigated for rapid thermal annealing in the temperature range 600–900 °C. The apparent activation energies for electrical activation of Be are 0.43±0.03 eV in InAlAs and 0.38±0.03 eV in InGaAs, and for Si are 0.58±0.05 eV in InAlAs and 0.64±0.06 eV in InGaAs. Higher activation efficiencies are obtained for both dopants in InGaAs relative to InAlAs and anomalously low activation for low dose Be implants is observed due to a lack of vacant sites for the Be to occupy. Extensive redistribution of Be after annealing at 750 °C, 10 s is observed in both materials, whereas Si shows no motion even for annealing at 850 °C.

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Ion implantation and dry etching characteristics of InGaAsP (λ=1.3 μm)

Pearton

Abernathy

Wisk

et al. 1993

Journal of Applied Physics

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The electrical activation characteristics of Si+ and Be+ ions implanted into InGaAsP (λ=1.3 μm) grown lattice matched to InP by metalorganic molecular beam epitaxy were studied as a function of ion dose (5×1012–5×1014 cm−2), annealing time (3–60 s) and annealing temperature (575–750 °C). Maximum doping concentrations of ∼2×1019 cm−3 were obtained for both Si+ and Be+, with activation energies for electrical activation of 0.58 and 0.39 eV, respectively. Multiple energy F+ or H+ implants can be used to produce high resistance layers for isolation purposes—maximum sheet resistances of ∼8×106 Ω/⧠ or ∼106 Ω/⧠ for initially p+ or n+ InGaAsP, respectively, were obtained for F+ implants followed by annealing near 450 °C. Smooth, anisotropic dry etching of the InGaAsP is obtained with electron cyclotron resonance CH4/H2/Ar discharges at low dc biases. The etch rates are the same for both n+ and p+ quaternary layers and are independent of the doping level.

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Dopant redistribution and crystalline damage removal during rapid thermal annealing of Be and Mg implants in Ga0.47In0.53As

Cited by 4 publications

References 18 publications

Silicon Nitride in Encapsulation and Recrystallization

Silicon Nitride in Encapsulation and Recrystallization

Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+ and Be+ ion implantation

Ion implantation and dry etching characteristics of InGaAsP (λ=1.3 μm)

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