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A novel precursor system for metalorganic vapor phase epitaxy of indium-containing layers, solid trimethylindium (TMI) partly dissolved in N, N-dimethyldodecylamine, is described. Used in a conventional bubbler, the output concentration of TMI entrained by H2 carrier gas from this source was measured using an ultrasonic cell (Epison) and compared with that from a conventional TMI source. Initially the output stability from both sources was found to be virtually identical; after approximately 50% depletion the output from the solution source was substantially more stable. The solution source was used to deposit InP and lattice-matched InGaAs/InP, with excellent optical and electrical properties (μ77=181 000 and 44 000 cm2/V s, respectively). With only 5 g solid TMI remaining, the continued stability of the solution source was shown by growing a lattice-matched GaInAs/InP layer having an x-ray diffraction peak of 26 arcsec.

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