Implantation damage control of silicon indiffusion during rapid thermal annealing of InP using AlN/Si3N4 as an encapsulant

Wilkie, J.H.; Sealy, B.J.

doi:10.1016/0040-6090(88)90192-7

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1997

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Cited by 4 publications

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“…For example, Si was diffused from the SiN x layer into InP damaged by ion implantation. 12 In our experiment, Si indiffusion in BSG capped samples was negligible, which was confirmed by SIMS measurements. The Si concentration was measured to be below 10 16 cm Ϫ3 , as shown in Fig.…”

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confidence: 82%

Effect of capping layers on activation of Be/As-implanted semi-insulating InP:Fe

Lee

Jeong

1997

Applied Physics Letters

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Be/As-coimplanted semi-insulating InP:Fe samples have been activated by rapid thermal annealing using two different capping layers to protect the surface during activation. Activated samples are investigated using Hall measurements, transmission electron microscopy, and secondary ion mass spectrometry. It is found that borosilicate glass capping results in more abrupt Be profiles as compared with aluminum oxide. Aluminum oxide capped samples show better electrical properties. However, an electrically dead layer and dislocation loop at the surface are observed in aluminum oxide capped samples. These results can be related to stress in the capped films during the activation process.

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confidence: 82%