Dopants and Defects in Semiconductors

McCluskey, Matthew; Häller, E. E.

doi:10.1201/b11819

Cited by 73 publications

(54 citation statements)

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“…38 Therefore, the LO-phonon-plasmon coupling causes the Raman peaks to be broader than those of a pure LO mode. 39 Furthermore, no Raman peaks related to the cubic GaN structure were observed. The Raman measurement therefore confirms the XRD finding that the GaN epilayer is a single-phase wurtzite, high-quality material.…”

Section: à2mentioning

confidence: 99%

High optical and structural quality of GaN epilayers grown on (2¯01) β-Ga2O3

Muhammed

Peres²,

Yamashita³

et al. 2014

Applied Physics Letters

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Section: à2mentioning

confidence: 99%

High optical and structural quality of GaN epilayers grown on (2¯01) β-Ga2O3

Muhammed

Peres²,

Yamashita³

et al. 2014

Applied Physics Letters

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“…25 The dip at 70.9 meV is due to multiphonon absorption (LO + TA). 26 The peaks at 65.8 and 68.7 meV were also observed in the thin Si:Cu sample (Fig. 2).…”

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confidence: 69%

“…Samples were measured in a van der Pauw geometry at a magnetic field of 1 T. As shown in Fig. 5, holes freeze out from the valence band for temperatures below ~50 K. The solid line is a fit to a standard freeze-out curve, 26 with an acceptor activation energy of 27 meV, as determined by the IR measurements. The only adjustable parameters were the concentrations of acceptors (N a = 1 X 10compensation, consistent with our IR measurements (Fig.…”

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confidence: 99%

Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

et al. 2014

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“…In addition, the potential for very large impurity spinorbit and exchange interactions has suggested new ways to probe [11] and manipulate local spins and magnetic properties using electric fields [9], strain [7], or a surface [12]. For a specific single substitutional transition-metal dopant in a tetrahedrally bonded semiconductor, the electronic structure of the midgap states is governed by charge-transfer energies, d-state filling, and the compatibility of d-orbital symmetry with the bonding in the surrounding host [13,14]. In the absence of spin-orbit splitting, the d states of a substitutional impurity split in the crystal field into two types of states with very different symmetry relative to the host: so-called e and t 2 states.…”

Section: Introductionmentioning

confidence: 99%

Observation of the symmetry of core states of a single Fe impurity in GaAs

Bocquel¹,

Kortan²,

Campion³

et al. 2017

Phys. Rev. B

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Bocquel, J.; Kortan, V.R.; Campion, R.P.; Gallagher, B.L.; Flatté, M.E.; Koenraad, P.M. Published in:Physical Review B DOI:10.1103/PhysRevB.96.075207Published: 23/08/2017 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We report the direct observation of two mid-gap core d states of differing symmetry for a single Fe atom embedded in GaAs. These states are distinguished by the strength of their hybridization with the surrounding host electronic structure. The midgap state of Fe that does not hybridize via σ bonding is strongly localized to the Fe atom, whereas the other, which does, is extended and comparable in size to other acceptor states. Tight-binding calculations of these midgap states agree with the spatial structure of the measured wave functions and illustrate that such measurements can determine the degree of hybridization via π bonding of impurity d states. These single-dopant midgap states with strong d character, which are intrinsically spin-orbit-entangled, provide an opportunity for probing and manipulating local magnetism and may be of use for high-speed electrical control of single spins.

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Dopants and Defects in Semiconductors

Cited by 73 publications

References 0 publications

High optical and structural quality of GaN epilayers grown on (2¯01) β-Ga2O3

High optical and structural quality of GaN epilayers grown on (2¯01) β-Ga2O3

Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

Observation of the symmetry of core states of a single Fe impurity in GaAs

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