Doped conducting-polymer–semiconducting-polymer interfaces: Their use in organic photovoltaic devices

Arias, Abraham; Granström, Magnus; Thomas, D. S.; Petritsch, K.; Friend, Richard H.

doi:10.1103/physrevb.60.1854

Cited by 119 publications

(58 citation statements)

References 29 publications

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“…We attribute this to the filter effect. 10,11 Because of the large MEH-PPV absorbance, the majority of excitons are created near the ITO/MEH-PPV interface. For the MEH-PPV single layer device, the electrons are not easily collected at the Al electrode since they are created far from it and are not transported well through the hole-transporting MEH-PPV.…”

Section: ϫRmentioning

confidence: 99%

Creation of a gradient polymer-fullerene interface in photovoltaic devices by thermally controlled interdiffusion

Drees

Premaratne

Graupner

et al. 2002

Applied Physics Letters

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Efficient polymer-fullerene photovoltaic devices require close proximity of the two materials to ensure photoexcited electron transfer from the semiconducting polymer to the fullerene acceptor. We describe studies in which a bilayer system consisting of spin-cast 2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene copolymer (MEH-PPV) and sublimed C60 is heated above the MEH-PPV glass transition temperature in an inert environment, inducing an interdiffusion of the polymer and the fullerene layers. With this process, a controlled, bulk, gradient heterojunction is created bringing the fullerene molecules within the exciton diffusion radius of the MEH-PPV throughout the film to achieve highly efficient charge separation. The interdiffused devices show a dramatic decrease in photoluminescence and concomitant increase in short circuit currents, demonstrating the improved interface.

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Section: ϫRmentioning

confidence: 99%

Creation of a gradient polymer-fullerene interface in photovoltaic devices by thermally controlled interdiffusion

Drees

Premaratne

Graupner

et al. 2002

Applied Physics Letters

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“…PEDOT͑PSS͒ was found to have a high work function value 5.2 eV 4 which allows efficient hole injection in light-emitting diodes 5 ͑LEDs͒ or collection of holes in photodiodes. 6,7 However, the higher resistivity of PEDOT͑PSS͒, compared with ordinary metals, may cause unwanted voltage drop under large currents. A metal layer under the polymer is used to make a high conductance line.…”

confidence: 99%

Polymer diodes with high rectification

Roman¹,

Berggren²,

Inganäs³

1999

Applied Physics Letters

102

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Polymer diodes made using a bilayer of doped poly(3,4-ethylenedioxythiophene) and a semiconducting polymer in a sandwich structure with two low-work-function metals are reported. The conducting polymer layer acted as a modifier of the injection properties of the low-work-function metal, allowing easy hole injection. Upon insertion of the conducting polymer layer, the contact-limited current flow became bulk limited. With this anode, the fabrication of diodes with a rectification ratio of seven orders of magnitude was possible. We present patterned microdiodes made with crossing of 10 μm lines, showing similar performance as the mm-size diode.

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“…A phase-separated bulk heterojunction (BHJ) nanostructure of large interfacial area is formed from this blend [25]. A thin poly (3, 4-ethylenedionythiophene): poly (styrenesulfonate) (PEDOT:PSS) layer is used as an anode contact because the work function of PEDOT:PSS matches with the HOMO of P3HT and this allows for effective extraction of holes from the active layer [26]. The PEDOT:PSS layer planarizes the ITO surface without affecting the light absorption by the active layer significantly.…”

Section: Introductionmentioning

confidence: 99%

Equivalent Circuit Modification for Organic Solar Cells

Hossain¹,

Das²,

Alford³

2015

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In this work, a newly fabricated organic solar cell based on a composite of fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) and regioregular poly (3-hexylthiophene) (P3HT) with an added interfacial layer of AgOx in between the PEDOT:PSS layer and the ITO layer is investigated and an equivalent circuit model is proposed for the device. Incorporation of the AgOx interfacial layer shows an increase in fill factor (by 33%) and power conversion efficiency (by 28%). Moreover, proper correlation has been achieved between the experimental and simulated I-V plots. The simulation shows that device characteristics can be explained with accuracy by the proposed model.

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Doped conducting-polymer–semiconducting-polymer interfaces: Their use in organic photovoltaic devices

Cited by 119 publications

References 29 publications

Creation of a gradient polymer-fullerene interface in photovoltaic devices by thermally controlled interdiffusion

Creation of a gradient polymer-fullerene interface in photovoltaic devices by thermally controlled interdiffusion

Polymer diodes with high rectification

Equivalent Circuit Modification for Organic Solar Cells

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