A highly oriented, well-aligned hierarchical Zn-In-O nanobelt-nanoprism array was synthesized by vapor-phase transport and condensation using GaN epilayer as the substrate. The upper nanobelts are found to be ZnO:In with an average Zn/In molar ratio of approximately 9:1, and the subjacent nanoprisms are found to be In 2 O 3 (ZnO) m (m = 2, 3, 4, and 5) structures. During self-assembly, the nanoprisms are vertically grown on GaN and well aligned along the superlattice stacking direction, upon which each nanobelt is horizontally grown along its [10-10] direction. The spatially resolved ca-