Doping and surface morphology of AlxGa1−xAs/GaAs grown at low temperature by liquid-phase epitaxy

Chandvankar, S. S.; Shah, Amit P.; Arora, B. M.

doi:10.1016/s0022-0248(97)00511-3

Cited by 4 publications

(3 citation statements)

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“…For a comparison we indicated in Fig. 4 some Hall data values reported earlier for AlGaAs grown by LPE 10 , 12 , 42 , 43 . It can be seen that layers grown from Ga melt demonstrate lower electron concentrations at lower growth temperature.…”

Section: Resultsmentioning

confidence: 86%

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Khvostikova,

Vlasov,

Ber

et al. 2024

Sci Rep

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Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the AlxGa1−xAs layer the high temperature LPE growth technique is required. However high epitaxial temperature increases the unintentional doping level. Epitaxy from mixed Ga–Bi melts was investigated as a way to solve this problem. It was found that for growing relatively thick AlxGa1−xAs layers, it is expedient to use Ga–Bi melts with 20 at% or less bismuth content. SIMS and Hall characterization of AlxGa1−xAs layers revealed that the growth of AlxGa1−xAs from mixed Ga-Bi melts reduces the background doping level (including carbon) and influences the native defect formation keeping the n-type conductivity. This effect is explained by the changes of the group III and V elements concentrations in the melt as well as Bi incorporation in the lattice.

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Section: Resultsmentioning

confidence: 86%

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Khvostikova,

Vlasov,

Ber

et al. 2024

Sci Rep

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“…The growth experiments are carried out in a resistively heated gold-coated transparent furnace in high purity hydrogen gas ambient. Further details of the experimental procedure are given in our previous publication [12]. A typical laser structure synthesized in these growth experiments consists of sequential growth of eight layers from eight different solutions as described in Table 1.…”

Section: Synthesis Of Laser Structuresmentioning

confidence: 99%

Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy

Chandvankar

Shah

Bhattacharya

et al. 2004

Journal of Crystal Growth

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“…Unintentional formation of the pyramidal structures and patterns, and the corresponding negative aspects have been discussed in detail 1 Present address: Department of Physics, West Virginia University, Morgantown, West Virginia 26506, USA. [1][2][3]. However, there are only few reports on the positive aspects of this structure and the ways to exploit it for the device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE

Balakrishnan

Iida

Kumagawa

et al. 2002

Semicond. Sci. Technol.

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A study of the liquid phase epitaxial growth of In x Ga 1−x As (x = 0.06) layers on different types of patterned GaAs(100) substrates has been carried out. The dependence of growth morphology on the stripe orientation of the star patterned trench substrate has been observed. Pyramid layers were grown in the stripes oriented along the 001 direction. Broken tent structures formed along the 012 direction. Pyramidal structured layers looked to grow faster than the tent-like and broken tent-like structures. In order to analyse the hollow pyramid structure growth in detail, they were grown on circular trench substrates for different periods of time. Hollow pyramidal structures of InGaAs have been grown on circular patterned trench substrates. Effective defect filtration can be realized in this kind of growth of hollow pyramidal structures. The formation mechanism of the hollow pyramid structured layers has been studied in detail.

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Doping and surface morphology of AlxGa1−xAs/GaAs grown at low temperature by liquid-phase epitaxy

Cited by 4 publications

References 0 publications

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy

Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE

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