Doping effects on electrical and optical properties of spin-coated ZnO thin films

Vorobyeva, N. A.; Rumyantseva, M. N.; Vasiliev, R. B.; Kozlovskiy, V.F.; Soshnikova, Yu. M.; Филатова, Д. Г.; Зайцев, В. Б.; Zaytseva, Anna; Гаськов, А.М.

doi:10.1016/j.vacuum.2014.11.007

Cited by 30 publications

(10 citation statements)

References 20 publications

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“…With an increase in the titanium content in TiO 2 @SnO 2 nanocomposites, a decrease in the size of SnO 2 crystal grains is observed as compared with the reference sample. A similar effect was repeatedly noted for nanocomposites based on semiconductor metal oxides [33,34,35]. The presence of impurities on the surface of growing crystallites slows down their growth rate under isothermal annealing due to the so-called Zener pinning [36].…”

Section: Resultssupporting

confidence: 58%

Sub-ppm Formaldehyde Detection by n-n TiO2@SnO2 Nanocomposites

Nasriddinov

Rumyantseva²,

Marikutsa³

et al. 2019

Sensors

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Formaldehyde (HCHO) is an important indicator of indoor air quality and one of the markers for detecting lung cancer. Both medical and air quality applications require the detection of formaldehyde in the sub-ppm range. Nanocomposites SnO2/TiO2 are promising candidates for HCHO detection, both in dark conditions and under UV illumination. Nanocomposites TiO2@SnO2 were synthesized by ALD method using nanocrystalline SnO2 powder as a substrate for TiO2 layer growth. The microstructure and composition of the samples were characterized by ICP-MS, TEM, XRD and Raman spectroscopy methods. The active surface sites were investigated using FTIR and TPR-H2 methods. The mechanism of formaldehyde oxidation on the surface of semiconductor oxides was studied by in situ DRIFTS method. The sensor properties of nanocrystalline SnO2 and TiO2@SnO2 nanocomposites toward formaldehyde (0.06–0.6 ppm) were studied by in situ electrical conductivity measurements in dark conditions and under periodic UV illumination at 50–300 °C. Nanocomposites TiO2@SnO2 exhibit a higher sensor signal than SnO2 and a decrease in the optimal measurement temperature by 50 °C. This result is explained based on the model considering the formation of n-n heterocontact at the SnO2/TiO2 interface. UV illumination leads to a decrease in sensor response compared with that obtained in dark conditions because of the photodesorption of oxygen involved in the oxidation of formaldehyde.

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Section: Resultssupporting

confidence: 58%

Sub-ppm Formaldehyde Detection by n-n TiO2@SnO2 Nanocomposites

Nasriddinov

Rumyantseva²,

Marikutsa³

et al. 2019

Sensors

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“…The quality of the diffraction patterns does not allow the accurate determination of ZnO unit cell parameters necessary to confirm the formation of ZnO-based solid solutions. The increase of impurity content leads to the broadening of XRD peaks indicating the decrease of ZnO grain size (dXRD) (Figure 1b) due to segregation of amorphous Ga-and In-containing phases on the surface of ZnO grains [12,13]. The dependence of ZnO(Ga, In) thick films conductance on impurity content is presented in Figure 2.…”

Section: Resultsmentioning

confidence: 99%

“…For this purpose, thin films ZnO(Ga,In) were synthesized by spin-coating technique [12]. The SSRM method enables us to measure variations in electrical conductivity or resistivity with a high spatial resolution.…”

Section: Resultsmentioning

confidence: 99%

“…Studies of the effect of impurities on active centers and the reactivity of the surface of zinc oxide are extremely few [8]. Codoping of ZnO with two donor impurities provides some additional opportunities [9][10][11][12]. The phase composition of the samples was determined by X-ray diffraction (XRD) using DRON-3 M instrument (CoK α radiation, λ = 1.7903 Å).…”

Section: Introductionmentioning

confidence: 99%

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Highly Sensitive ZnO(Ga, In) for Sub-ppm Level NO2 Detection: Effect of Indium Content

et al. 2017

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Nanocrystalline ZnO, ZnO(Ga), and ZnO(Ga, In) samples with different indium contents were prepared by wet-chemical method and characterized in detail by ICP-MS and XRD methods. Gas sensing properties toward NO 2 were studied at 150-450 • C by DC conductance measurements. The optimal temperature for gas sensing experiments was determined. The dependence of the ZnO(Ga, In) sensor signal to NO 2 at 250 • C correlates with the change of conductivity of the samples. The introduction of indium into the system leads to an increase in the values of the sensor signal in the temperature range T < 250 • C. The investigation of the local sample conductivity by scanning spreading resistance microscopy demonstrates that, at high indium content, the sensor properties are determined by the In-Ga-Zn-O layer that forms on the ZnO surface.

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“…Zinc oxide is a wide-bandgap compound semiconductor material with excellent photoelectric properties [1,2,3]. As a new type of wide-bandgap semiconductor, ZnO has attracted increasing attention in recent years [4,5,6]. It has great value for development and application in ultraviolet (UV) laser diodes, UV light-emitting devices, thin-film transistors, and solar cells [7,8,9,10].…”

Section: Introductionmentioning

confidence: 99%

Stability Analysis of Multi Process Parameters for Metal-Organic Chemical Vapor Deposition Reaction Cavity

et al. 2019

Molecules

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The parameters for metal-organic chemical vapor deposition (MOCVD) processes significantly influence the properties of ZnO films, especially the flow stability of the chamber, which is caused by process parameters such as the shape of reaction chamber, the working pressure, the growth temperature, the susceptor rotational speed, the gas flow rate, and the nature of the carrier gas at inlet temperature. These parameters are the preconditions for the formation of high-quality film. Therefore, this study uses Ar as a carrier gas, diethylzinc (DEZn) as a Zn source, and H2O as an oxygen source and adopts the reaction mechanism calculated by quantum chemistry, which includes ten gas reactions and eight surface reactions. The process parameters of a specific reaction chamber model were analyzed based on the computational fluid dynamics method. This study also presents an accurate prediction of the flow regime in the reactor chamber under any operating conditions, without additional experiments, based on an analysis of a great quantity of simulation data. Such research is also significant for selecting the growth parameters relevant to production, providing a specific process growth window, narrowing the debugging scope, and providing a theoretical basis for the development of MOCVD equipment and process debugging.

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Doping effects on electrical and optical properties of spin-coated ZnO thin films

Cited by 30 publications

References 20 publications

Sub-ppm Formaldehyde Detection by n-n TiO2@SnO2 Nanocomposites

Sub-ppm Formaldehyde Detection by n-n TiO2@SnO2 Nanocomposites

Highly Sensitive ZnO(Ga, In) for Sub-ppm Level NO2 Detection: Effect of Indium Content

Stability Analysis of Multi Process Parameters for Metal-Organic Chemical Vapor Deposition Reaction Cavity

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