In this study, we calculate the T = 300 K scattering and thermoelectric transport properties of rhombohedral GeTe using first-principles modeling. The room-temperature phase of GeTe has a layered structure, with cross-plane and in-plane directions oriented parallel and perpendicular to [111], respectively. Based on rigorous electron-phonon scattering, our transport calculations reveal unusual anisotropic properties; n-type GeTe has a cross-plane electrical conductivity that is roughly 3× larger than in-plane. p-type GeTe, however, displays opposite anisotropy with inplane conducting roughly 2× more than cross-plane, as is expected in quasi-2D materials. The power factor shows the same anisotropy as the electrical conductivity, since the Seebeck coefficient is relatively isotropic. Interestingly, cross-plane n-GeTe shows the largest mobility and power factor approaching 500 cm 2 /V-s and 32 µW/cm-K 2 , respectively. The thermoelectric figure-of-merit, zT , is enhanced as a result of this unusual anisotropy in n-GeTe since the lattice thermal conductivity is minimized along cross-plane. This decouples the preferred transport directions of electrons and phonons, leading to a threefold increase in zT along cross-plane compared to in-plane. The n-type anisotropy results from high-velocity electron states formed by Ge p-orbitals that span across the interstitial region. This surprising behavior, that would allow the preferential conduction direction to be controlled by doping, could be observed in other quasi-2D materials and exploited to achieve higher-performance thermoelectrics. * Electronic address: jmaassen@dal.ca arXiv:1904.06439v2 [cond-mat.mtrl-sci]