Abstract:The effects of doping in the multiquantum well (MQW) active region on the properties of InP-based long wavelength deep ridge transistor lasers (TLs) are numerically studied. Doping in the MQWs is shown to lead to a decrease of the slope efficiency and a notable increase of the current gain of the TLs, which makes MQW doping a useful tool for facilitating the design of TLs. When there are nonradiative recombination centers on the exposed MQW side walls of the TLs, doping in the MQWs is found to be able to enhan… Show more
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