Doping of chalcogenide glassy semiconductor by implanting Ni ions

Singh, Priya; Bhatia, K.L.; Kishore, N.; Singh, Mahender; Malik, S. K.; Kanjilal, D.

doi:10.1016/0022-3093(95)00288-x

Cited by 10 publications

(9 citation statements)

References 24 publications

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“…The rise of room temperature conductivity values shows that the Si-implantation into GaSe single crystals together with the annealing has a pronounced effect on the conductivity values. Therefore, we attributed this effect to the Si-induced modification and doping of the semiconductor [13]. The variations of the dark conductivity with temperature show exponential behavior for all the samples, with different activation energy and yield two temperature regions in the studied temperature range.…”

Section: Resultsmentioning

confidence: 89%

Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal

Karabulut¹,

Parlak

Yılmaz

et al. 2003

Cryst. Res. Technol.

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GaSe single crystals grown by Bridgman method have been doped by ion implantation technique. The samples were bombarded in the direction parallel to c-axis by Si ion beam of about 100 keV to doses of 1x10 16 ions/cm 2 at room temperature. The effects of Si implantation with annealing at 500 and 600 o C on the electrical properties have been studied by measuring the temperature dependent conductivity and photoconductivity under different illumination intensities in the temperature range of 100-320 K. It is observed that Si implantation increases the room temperature conductivity 10 -7 to 10 -3 (Ω-cm) -1 depending on the post annealing temperature. The analysis of temperature dependent conductivity shows that at high temperature region above 200 K, the transport mechanism is dominated by thermal excitation in the doped and undoped GaSe samples. At lower temperatures, the conduction of carriers is dominated by variable range hopping mechanism in the implanted samples. Annealing of the samples at and above 600 o C weakens the temperature dependence of the conductivity and photoconductivity. This indicates that annealing of the implanted samples activates Si-atoms and increases structural deformations and stacking faults. The same behavior was observed from photoconductivity measurements. Hence, photocurrent-illumination intensity dependence in the implanted samples obeys the power low I pc ∝ Φ n with n between 1 and 2 which is an indication of continuous distribution of localized states in the band gap.

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Section: Resultsmentioning

confidence: 89%

Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal

Karabulut¹,

Parlak

Yılmaz

et al. 2003

Cryst. Res. Technol.

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“…% ⌬E a Ͻ⌬E s suggests that the band tailing becomes more asymmetric with possible more tailing in conduction band as compared to valence band. 9 The n-type conduction for xу5 at. % can be considered to be a result of the unpinning of E F which now moves towards the conduction band as seen in Fig.…”

Section: Discussionmentioning

confidence: 99%

n-Type conduction in Pb doped Se–In chalcogenide glasses

Mehra

Kohli

Pundir

et al. 1997

Journal of Applied Physics

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“…Doping of bulk chalcogenide glassy semiconductors by implanting Ni ions has been reported [ 41]. It has been observed from the above studies that the ion-induced effect on the Pb-Ge-Se glasses leads to electronic conduction process by a variable range hopping mechanism.…”

Section: Thesis Objectivesmentioning

confidence: 92%

“…Chalcogenide glasses and thin films exhibit wide variety of changes in their structural properties, electronic transport and optical properties when they are exposed to light or heavy ion irradiations [39][40][41][42][43]. The structure of amorphous chalcogenide glasses consists of a disordered network having some dangling bonds as defects [ 4].…”

Section: Thesis Objectivesmentioning

confidence: 99%

Photo-Electrical Properties Of Semiconducting Se-Sb-In Thin Films

Kamboj¹

2021

Preprint

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The objective of this research project was to analyze the photo-degradation of the photocurrent of the electron beam evaporated amorphous semiconducting Se90-xSb10Inx (0 ≤ x ≤ 15) thin films (α-Se90-xSb10Inx). The photo-induced effects in amorphous semiconducting Se90-xS10Inx (0 ≤ x ≤ 15) thin films were studied using two approaches: steady state and transient photoconductivity. The degradation of photocurrent has been explained on the basis of theoretical models. The steady state analysis has been performed by plotting the photocurrent (Iph) versus light intensity (F) and this variation follows a power law Iph=Fy. The value of exponent γ lies between 0.5 and 1.0, which indicates there exists a continuous distribution of localized states in the mobility gap of Se90-xSb10Inx (0 ≤ x ≤ 15) thin films. For transient photoconductivity, when the samples were illuminated with light, the photocurrent quickly reaches the maximum value and thereafter, it starts decreasing with the exposure period and becomes stable after approximately 15 minutes of exposure. This kind of phenomenon is termed as photodegradation of photocurrent. The results have been explained on the basis of charged defect model and the inter-cluster interaction model. High photocurrents are found for α-Se75Sb10In15 system, which is even higher than the parent system Se₉₀Sb₁₀. The influence of bias voltage on the dark current and photocurrent of the Se90-xSb10Inx (0 ≤ x ≤ 15) thin films is also investigated. Both the dark and photocurrent increase with increase in the bias voltage. The compositional dependence of dark conductivity, photoconductivity and the photosensitivity shows a minimum at 5 atomic percentage of Indium (In) concentration, which has been explained based on chemically ordered network model and the topological model.

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Doping of chalcogenide glassy semiconductor by implanting Ni ions

Cited by 10 publications

References 24 publications

Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal

Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal

n-Type conduction in Pb doped Se–In chalcogenide glasses

Photo-Electrical Properties Of Semiconducting Se-Sb-In Thin Films

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