Doping of Fluorine of Tin Dioxide Films Synthesized by Sol-Gel Method

Dmitriyeva, Elena; Mukhamedshina, Daniya; A, Mit’ K.; Lebedev, Igor; Fedosimova, Anastasia; E.A, None Grushevskaja

doi:10.32014/2019.2518-170x.9

Cited by 9 publications

(4 citation statements)

References 8 publications

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“…Table 2 shows that the addition of NH 4 F to the SnCl 4 /EtOH/NH 4 F film-forming system leads to a several-fold increase in specific conductivity. This confirms the presence of fluorine ions as additional sources of free charge carriers in the films [55]. The addition of an aqueous ammonia solution to the SnCl 4 /EtOH/NH 4 OH film-forming system also led to an increase in the specific conductivity.…”

Section: Optical Spectra and Surface Resistancesupporting

confidence: 61%

The Influence of Lyophobicity and Lyophilicity of Film-Forming Systems on the Properties of Tin Oxide Films

Dmitriyeva,

Lebedev,

Bondar

et al. 2023

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In this work, the effects of lyophobicity and lyophilicity of film-forming systems on the properties of thin nanostructured films was studied. Systematic series of experiments were carried out with lyophilic film-forming systems: SnCl4/EtOH, SnCl4/EtOH/NH4F, SnCl4/EtOH/NH4OH and lyophobic systems: SnO2/EtOH and SnO2/EtOH/NH4F. Film growth mechanisms are determined depending on the type of film-forming system. The surface of the films was studied using a scanning electron microscope and an optical microscope. The spectrophotometric method is used to study the transmission spectra and the extinction coefficient. The surface resistance of the films was determined using the four-probe method. The quality factor and specific conductivity of the films are calculated. It was found that the addition of a fluorinating agent (NH4F) to a film-forming system containing SnO2 in the form of a dispersed phase does not lead to an increase in the specific conductivity of the films. X-ray diffraction analysis proved the incorporation of fluorine ions into the structure of the film obtained from the SnCl4/EtOH/NH4F system by the presence of SnOF2 peaks. In films obtained from SnO2/EtOH/NH4F systems, there are no SnOF2 peaks. In this case, ammonium fluoride crystallizes as a separate phase and decomposes into volatile compounds.

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Section: Optical Spectra and Surface Resistancesupporting

confidence: 61%

The Influence of Lyophobicity and Lyophilicity of Film-Forming Systems on the Properties of Tin Oxide Films

Dmitriyeva,

Lebedev,

Bondar

et al. 2023

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“…On the other hand, on the researched solar cells, the LID effect increases with an increase in the crystallization fraction and therefore with decreasing [Oi] and it can be concluded that in this case the LID effect is more associated with other processes and mechanisms than the formation of B-O complexes. A recent paper [13][14][15]reported that metal impurities such as copper form electrically active precipitates in the bulk of silicon when exposed to light and can cause degradation of the electrical characteristics of solar cells. In addition, [16]reported on the influence of the architecture of solar cells on the effect of degradation during illumination; it was shown that solar cells with a passivated surface are more sensitive to degradation.…”

Section: Resultsmentioning

confidence: 99%

High-Tech Production of Photo-Energy in Kazakhstan Based on the Sarykol Quartz Deposit

Kalygulov¹,

Klinovitskaya²,

Turmagambetov³

et al. 2019

OF THE ACADEMY OF SCIENCES OF THE REPUBLIC OF KAZAKHSTAN

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Б а с р е д а к т о р ы ф.-м.ғ.д., проф., ҚР ҰҒА академигі Ғ.М. Мұтанов Р е д а к ц и я а л қ а с ы: Жұмаділдаев А.С. проф., академик (Қазақстан) Кальменов Т.Ш. проф., академик (Қазақстан) Жантаев Ж.Ш. проф., корр.-мүшесі (Қазақстан) Өмірбаев У.У. проф. корр.-мүшесі (Қазақстан) Жүсіпов М.А. проф. (Қазақстан) Жұмабаев Д.С. проф. (Қазақстан) Асанова А.Т. проф. (Қазақстан) Бошкаев К.А. PhD докторы (Қазақстан) Сұраған Д. корр.-мүшесі (Қазақстан) Quevedo Hernando проф. (Мексика), Джунушалиев В.Д. проф. (Қырғыстан) Вишневский И.Н. проф., академик (Украина) Ковалев А.М. проф., академик (Украина) Михалевич А.А. проф., академик (Белорус) Пашаев А. проф., академик (Əзірбайжан) Такибаев Н.Ж. проф., академик (Қазақстан), бас ред. орынбасары Тигиняну И. проф., академик (Молдова) «ҚР ҰҒА Хабарлары. Физика-математикалық сериясы».

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“…This ability makes it possible to use SnO 2 as a catalyst for oxidative processes [5][6][7]. The change in the resistance of tin oxide in the presence of various gases formed the basis for use as a sensitive element in gas sensors [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

The effect of three-minute exposure of oxygen plasma on the properties of tin oxide films

Dmitriyeva¹,

Lebedev²,

Grushevskaya³

et al. 2020

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Research devoted to the effect of three-minute exposure of oxygen plasma on the properties of tin oxide films investigation. The films were obtained by sol-gel method from five-water tin tetrachloride solution. The concentration of tin ions in the SnCl4/EtOH film-forming system was 0.14 mol/l. The solution system was deposed on the glass substrate by carring out a modified dipping method. Plasma treatment was performed at a pressure of 6.5 Pa and a power of about 20 Watts. The frequency of the oscillations produced by the generator was 27.12 ± 0.6 % MHz as well. The temperature of the samples during processing did not exceed 100 ºC. As a result of the formation of tin oxide (II), the film transmittance decreased after treatment with oxygen plasma. The width of the electric forbidden zone of the obtained samples was calculated, which was 3.95 eV for glass and 3.79 eV for film. The resistance of the films was determined by 10 measurements on different parts of the samples. The film without processing has a resistance of about 4255 ± 1158 kΩ, after processing, the resistance decreased by 25 times and amounted to 167 ± 26 kΩ. A decrease in resistance indicates an increase in the concentration of charge carriers in the sample. The resulting SnO is a semiconductor that lowers the transmittance of the studied films and contributes to reducing their resistance. X-ray structural analysis of the samples was also performed. After processing in oxygen plasma, the intensity of reflection from the (110) plane have increased. It should be noted that the number of planes with (101) indexes has decreased. The study of the sample surface showed the destructive nature of three-minute exposure by oxygen plasma. Keywords: thin films, SnO2, sol-gel method, oxygen plasma treatment, transparency, structure, resist

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Doping of Fluorine of Tin Dioxide Films Synthesized by Sol-Gel Method

Cited by 9 publications

References 8 publications

The Influence of Lyophobicity and Lyophilicity of Film-Forming Systems on the Properties of Tin Oxide Films

The Influence of Lyophobicity and Lyophilicity of Film-Forming Systems on the Properties of Tin Oxide Films

High-Tech Production of Photo-Energy in Kazakhstan Based on the Sarykol Quartz Deposit

The effect of three-minute exposure of oxygen plasma on the properties of tin oxide films

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