Physics of Organic Semiconductors 2012
DOI: 10.1002/9783527654949.ch14
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Doping of Organic Semiconductors

Abstract: Björn Lü ssem studied electrical engineering at the Rheinisch-Westfälische Technische Hochschule (RWTH) in Aachen and the University of Bath and obtained his degree as Diplomingenieur in 2003. He prepared his PhD thesis at the Research Center in Jülich, Germany, in the field of molecular electronics. His thesis concentrates on scanning tunneling microscopy of pure and mixed selfassembled monolayers and has been awarded the VDE-Promotionspreis and the Günther-Leibfried-Preis. After staying at the Materials Scie… Show more

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Cited by 21 publications
(31 citation statements)
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“…An n-type dopant on the other hand, is a reducing agent which donates an electron to the lowest unoccupied molecular orbital (LUMO) of the organic semiconductor introducing a negative charge carrier. 12 The integer charge transfer model and the molecular orbital levels involved in the doping processes (p-type and n-type) are schematically represented in Figure 2.…”
Section: Doping In Organic Semiconductorsmentioning
confidence: 99%
See 1 more Smart Citation
“…An n-type dopant on the other hand, is a reducing agent which donates an electron to the lowest unoccupied molecular orbital (LUMO) of the organic semiconductor introducing a negative charge carrier. 12 The integer charge transfer model and the molecular orbital levels involved in the doping processes (p-type and n-type) are schematically represented in Figure 2.…”
Section: Doping In Organic Semiconductorsmentioning
confidence: 99%
“…Unlike inorganic semiconductors, in which an impurity is introduced to a crystalline semiconductor to reduce the gap between the valence and conduction bands, doping in organic semiconductors requires the addition of strongly electron donating (n-type) or strongly electron withdrawing (p-type) molecular species which induce mobile charge carriers along the polymer backbone. 10,12 A p-type dopant can be thought of as an oxidizing agent which removes an electron from the highest occupied molecular orbital (HOMO) of the organic semiconductor, introducing a positive hole along the backbone. An n-type dopant on the other hand, is a reducing agent which donates an electron to the lowest unoccupied molecular orbital (LUMO) of the organic semiconductor introducing a negative charge carrier.…”
Section: Doping In Organic Semiconductorsmentioning
confidence: 99%
“…11−16 The doping mechanism occurs by an electron transfer process between the dopant molecule and the host material. 11,17 For p-type doping, the electron is transferred from the host material to the dopant, and for n-type doping the electron transfers from the dopant molecule to the host material. An important difference between doping inorganic semiconductors and doping organic electronic materials is that, for organic doping, the dopant molecules are not bound to their host material by strong covalent bonds.…”
Section: ■ Introductionmentioning
confidence: 99%
“…The diffusion of dopant molecules within and between layers of a device can greatly hinder the performance by causing unwanted interactions with other materials, but there have been very few studies directly investigating this process. 11,18,19 The first doping experiments were performed using atomic dopants such as iodine and bromine 20,21 and later using atoms such as lithium, cesium, and strontium. 22,23 However, those dopants are all too small.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Additionally, polymer:fullerene solar cells are not intentionally doped like their inorganic counterparts or like many small molecule solar cells 11 and therefore rely on selective contacts and the difference in work function between electrodes for efficient charge collection. However, several studies have found evidence for unintentional doping [12][13][14][15][16][17][18][19] and discussed the consequences for device behaviour 6,[20][21][22][23][24][25][26][27][28][29][30] . Whilst the origin of this doping is unclear 15 , its effects on photovoltaic performance can be substantial; however many recent analyses of device performance neglect doping 8,[31][32][33] despite the fact that the influence of doping and the electric field on charge carrier collection is well known for a long time 34 and wellstudied for instance in the field of quantum dot photovoltaics 35,36 .…”
mentioning
confidence: 99%