Doping of semiconductor devices by Laser Thermal Annealing

Huet, Karim; Mazzamuto, Fulvio; Tabata, Toshiyuki; Toqué-Tresonne, I.; Mori, Yoshihiro

doi:10.1016/j.mssp.2016.11.008

Cited by 48 publications

(31 citation statements)

References 37 publications

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“…The main advantage of UV nanosecond laser annealing (UV-NLA) in semiconductor technology is that it offers the possibility to confine high-temperature processing to the nearsurface region enabling the creation of ultra-shallow heavily doped layers [1,2]. Since the 1980s, several papers have been devoted to the investigation of this annealing process, mainly in view of its application for solar cells fabrication [3] or for the miniaturization of source and drain regions in MOSFET devices [4,5].…”

Section: Introductionmentioning

confidence: 99%

Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

Monflier

Tabata²,

Rizk³

et al. 2021

Applied Surface Science

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In this work, we present a comprehensive investigation of impurities contamination in silicon during UV Nanosecond Laser Annealing at high energy density. By investigating in detail the impact of the annealing ambient and of the surface preparation prior to UV-NLA (including the variation of the surface oxide thickness), we show that the observed oxygen penetration originates from the surface oxide layer. It is proposed that, at high energy UV-NLA, the prolonged contact of SiO2 with high temperature liquid Si induces a partial degradation of the SiO2/Si interface, leading to bond breaking and subsequent injection of O atoms into the substrate. A degradation involving less than 5 % of the O atoms contained in the 1 st SiO2 ML is sufficient to account for the measured amount of in-diffused O in all of the analysed samples.

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Section: Introductionmentioning

confidence: 99%

Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

Monflier

Tabata²,

Rizk³

et al. 2021

Applied Surface Science

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“…As a consequence, the annealing process timescale becomes shorter and shorter [3,4]. Nanosecond Laser Annealing (NLA), which enables to reach higher dopants activation in Si [5][6][7] or Ge [8,9], is very promising from that point of view. Ultraviolet NLA (UV-NLA) can also be used for 3D Integration, as its short pulse duration and its short wavelength result in high anneal temperatures near the surface while keeping embedded layers at much lower temperatures [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers

Dagault

Kerdilès

Alba

et al. 2020

Applied Surface Science

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30 nm-thick pseudomorphic Si1-xGex layers with Ge concentrations x ranging from 0 to 0.4 were submitted to Ultraviolet Nanosecond Laser Annealing (UV-NLA). The impact of UV-NLA on the various regimes and on the layer crystallinity was assessed for each Ge concentration. This study highlighted the existence of four annealing regimes, with notably a surface melt regime with isolated molten islands on the surface. The strain in the layer depended on the liquid/solid interface roughness and on the stored elastic energy in the layers. In the case of smooth liquid/solid interfaces, a limit for perfect recrystallization was estimated near 750 mJ/m².

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“…In figure (4a), we show the scattering efficiency of a Si-NS with a dopant concentration N dop =2.66×10 21 cm −3 corresponding to a LSPR wavelength of about 1.54 µm (see solid dark curve in frame (a)). This wavelength corresponds to the state-of-the art active dopant concentration that can be obtained experimentally by pulsed laser annealing [18], and is of outmost interest in photonics. It indeed belongs to the optical telecommunication window and matches the emission of Erbium ions, which have been recently found new applications in Telecom-Band Quantum Optics [35].…”

Section: Case Of a Single Cuboid Nanostructure Of Doped Simentioning

confidence: 99%

“…High dopant concentrations are actually achievable in Si by using out of equilibrium methods as nanosecond Laser Thermal Annealing (LTA) treatments. Hence, active phosphorus concentrations as high as 5×10 20 cm −3 up to 2×10 21 cm −3 can be reached in respectively thin SOI [19] and bulk silicon [18]. Recently doping Si with deep chalcogen donor as Te by using the same non equilibrium processing allows also exceeding 10 21 cm −3 active dopants [20].…”

mentioning

confidence: 99%

Theory of plasmonic properties of hyper-doped silicon nanostructures

Majorel

Paillard

Patoux

et al. 2019

Optics Communications

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The presence of a Localized Surface Plasmon Resonance in doped semiconductor nanostructures opens a new field for plasmonics and metasurfaces. Semiconductor nanostructures can be easily processed, have weak dissipation losses, and the plasmon resonance can be tuned from the mid-to the near-infrared spectral range by changing the dopant concentration (in complement to the constituent material, the size and shape of the nanostructure). We present in this paper an extension of the Green Dyadic Method applied to the case of doped silicon nanostructures of arbitrary shape on a planar silica substrate. The method is used to compute both far-and near-fied optical properties, such as the extinction efficiency and the electromagnetic near-field intensity inside and around any doped silicon nanostructure, respectively. This theoretical approach provides an important tool for active dopant characterization in doped semiconductor nanostructures, for near-field imaging of complex nanoantennas produced by electron beam lithography, and for the definition of doped semiconductor-based metasurfaces.During the three last decades, a huge amount of work has been devoted to the understanding of the plasmonic properties of complex metallic nanostructures, either individually or as the elementary brick of a metamaterial. This interest was also driven by potential applications in sensing devices [1], nanophotonic devices [2], photocatalysis [3], and field-enhanced spectroscopies [4,5,6,7]. However, the use of metals such as gold or silver is still an issue due to a poor compatibility with the semiconductor processing technology, and to strong dissipation losses at optical and infrared frequencies.Recently, a new category of plasmonic materials emerged, with the study of Localized Surface Plasmon Resonance (LSPR) in heavily doped semiconductor nanostructures and metamaterials [8,9,10,11]. Compared to metals, the imaginary part of the dielectric constant in the visible and infrared range is low for most semiconductors, leading to weak losses. As for metals, the LSPR frequency is tunable by the constituent material, the size and shape of the nanostructure, and its dielectric environment. However, the active dopant concentration, thus the free carrier (electrons or holes) concentration, allows to finely tune the LSPR frequency [8,10]. Notably, the lower order of magnitude of carrier density in degenerate semiconductors with respect to noble metals has an attractive consequence: even a minor modification of the * Corresponding author

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Doping of semiconductor devices by Laser Thermal Annealing

Cited by 48 publications

References 37 publications

Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers

Theory of plasmonic properties of hyper-doped silicon nanostructures

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