A compact, low-cost semiconductor laser diode producing 40 ps full width at half maximum (FWHM) singlespike lasing pulses with 6 Watts peak power from a 20 μm stripe width is realized in the form of a simple singleheterostructure, grown by metal-organic chemical vapor deposition. The structure possesses a linearly graded doping profile extending from the p þ and n þ sides towards the p-n junction. This laser diode is operated under room temperature conditions and applies pumping current pulses (roughly 10 to 20 A∕2 to 3 ns FWHM) achievable with a commercially available silicon avalanche transistor as an electrical switch. © 2012 Society of Photo-Optical Instrumentation Engineers (SPIE).