2019
DOI: 10.1016/j.sse.2019.03.038
|View full text |Cite
|
Sign up to set email alerts
|

Doping profile extraction in thin SOI films: Application to A2RAM

Abstract: We propose for the first time a method based on C-V measurement to extract the bridge doping profile which governs the A2RAM performances. Assessed with TCAD simulation and simple extraction model adapted from bulk devices, this technique is validated with experimental data.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2020
2020
2022
2022

Publication Types

Select...
3
1
1

Relationship

1
4

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 11 publications
0
1
0
Order By: Relevance
“…caling issues of the conventional DRAM (dynamic random access memory) has increased the demand for capacitor-less 1T-DRAM devices [1]- [4]. Novel memory cells based on SOI exhibit great performance for embedded application such as MSDRAM [5]- [7], A2RAM [8]- [10], and Z 2 -FET [11]- [13]. Among them, Z 2 -FET has shown great interest for the next generation DRAM device which features sharp switching characteristics with high on/off current ratio, low operation voltage, and scalability [14]- [16].…”
Section: Introductionmentioning
confidence: 99%
“…caling issues of the conventional DRAM (dynamic random access memory) has increased the demand for capacitor-less 1T-DRAM devices [1]- [4]. Novel memory cells based on SOI exhibit great performance for embedded application such as MSDRAM [5]- [7], A2RAM [8]- [10], and Z 2 -FET [11]- [13]. Among them, Z 2 -FET has shown great interest for the next generation DRAM device which features sharp switching characteristics with high on/off current ratio, low operation voltage, and scalability [14]- [16].…”
Section: Introductionmentioning
confidence: 99%