The dilute magnetic semiconductor oxides (DMSO) are of current interest because of their potential 'spintronics' applications, where the charge and spin degrees of freedom of electrons are used simultaneously for novel memory and optical device applications. [1,2] In particular, Co doped ZnO has attracted considerable interest. [3] There have been a number of reports about the observance of room temperature ferromagnetism in thin films of Zn 1-x Co x O produced by different techniques. [4][5][6][7] Schwartz et al. [8] also observed ferromagnetism above room temperature in aggregated particles of Co doped ZnO, by heat treating (below 200 o C) colloidal quantum dots of Co doped ZnO. However, most recent works on well-characterized polycrystalline Zn 1-x Co x O samples indicate that they are not ferromagnetic at room temperature, [9][10][11][12][13][14] except for an isolated report by Deka et al.. [15] In general, studies on polycrystalline samples have converged on to a conclusion that robust room temperature ferromagnetism (RTF) is not realizable in Co doped ZnO without additional carrier doping. Sato and Katayama-Yoshida [16] predicted Co doped ZnO would become ferromagnetic in the presence of n-type carriers. This was experimentally demonstrated by Schwartz and Gamelin. [17] They were the first to show the reversible cycling of paramagnetic (P) to ferromagnetic (FM) state in Co doped ZnO spin coated films, produced from colloidal nanocrystals, by introducing and removing interstitial Zn (Zn i ), a native n-type defect of ZnO. Later Spaldine, [18] in a computational study, showed only hole doping promotes RTF in Co doped ZnO. This is in contrast with