Dose dependences of the optical properties of fullerene films subjected to the electron irradiation

Dmytrenko, О. P.; Кulish, N. P.; Belyǐ, N. M.; Prylutskyy, Yu. І.; Поперенко, Л. В.; Stashchuk, V. S.; Poroshin, V. G.; Pavlenko, O. L.; Shlapatskaya, V.V.; Bernas, H.; Scharff, P.

doi:10.1016/j.tsf.2005.08.237

Cited by 7 publications

(3 citation statements)

References 9 publications

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“…However, the ten Raman-active vibration modes show progressive decrease in the peak intensity as the electron fluence increases. Decrease in the peak intensity and the peak broadening of the strongest peak at 1,464 cm -1 (A g (2), "pentagonal pinch" mode) clearly proves that the cage was destroyed by further electron irradiation [ 25 - 28 ]. These facts lead to a conclusion that the C 60 cage was degraded from its icosahedral symmetry by high dose of electron irradiation.…”

Section: Resultsmentioning

confidence: 99%

“…After the electron irradiation at a high fluence of 2.88 × 10 17 cm -2 , broad bands at 1,376, 1,618, and 1,578 cm -1 , which respectively correspond to D-, D'-, and G-bands of graphite [ 29 , 30 ] appeared (inset of Figure 5B ). In addition, the Raman spectra of the electron-irradiated PCBM exhibit photoluminescence background with a positive slope and the slope of the background increases with increasing the electron fluence (Figure 5A ) [ 25 , 31 ]. These two results indicate that PCBM is transformed into hydrogenated amorphous carbon structure at high dose of electron irradiation (Figure 3D ).…”

Section: Resultsmentioning

confidence: 99%

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Tuning the electronic band structure of PCBM by electron irradiation

2011

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Tuning the electronic band structures such as band-edge position and bandgap of organic semiconductors is crucial to maximize the performance of organic photovoltaic devices. We present a simple yet effective electron irradiation approach to tune the band structure of [6, 6]-phenyl-C61-butyric acid methyl ester (PCBM) that is the most widely used organic acceptor material. We have found that the lowest unoccupied molecular orbital (LUMO) level of PCBM up-shifts toward the vacuum energy level, while the highest occupied molecular orbital (HOMO) level down-shifts when PCBM is electron-irradiated. The shift of the HOMO and the LUMO levels increases as the irradiated electron fluence increases. Accordingly, the band-edge position and the bandgap of PCBM can be controlled by adjusting the electron fluence. Characterization of electron-irradiated PCBM reveals that the variation of the band structure is attributed to the molecular structural change of PCBM by electron irradiation.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Tuning the electronic band structure of PCBM by electron irradiation

2011

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“…It was found that the peanut-shaped fullerene polymers possess the metallic electronic structure [18]. Dmytrenko et al reported the degradation of C 60 molecules in thin films subjected to the high-energy electron irradiation (E = 1.8 MeV) up to the irradiation dose of 8 MGy [19].…”

Section: Introductionmentioning

confidence: 99%

Thin polymerized C60 coatings deposited in electrostatic field via electron-beam dispersion of fullerite

2010

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The aim of the present study is to clarify the charge composition of fullerite C 60 electron-beam dispersion (EBD) products and investigate the influence of fullerene ions and electrons on the structure of the deposited coatings by applying an additional electrostatic field to the substrates. It was found that C 60 EBD products contain positive fullerene ions and electrons. By using Raman and attenuated total reflection Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, laser desorption/ionization mass-spectrometry and atomic force microscopy, it was shown that the assistance of the electrons additionally accelerated up to 300 eV results in the formation of a mixture of dumb-bell-and peanut-shaped C 60 polymers. The assistance of the positive fullerene ions additionally accelerated up to 300 eV leads to the formation of highly cross-linked random 3D networks of covalently bonded fullerene molecules.

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Direct Electron‐Beam Writing of Highly Conductive Wires in Functionalized Fullerene Films

Gibbons

Manickam

Preece

et al. 2009

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This work demonstrates the patterning of thin films (approximately 25 nm) of a newly synthesized fullerene derivative by direct-write electron-beam lithography to produce highly conducting carbon microstructures. Scanning electron microscopy and atomic force microscopy are used to characterize the resulting microstructure morphology, whilst the resistivities of the structures are probed using four-point probe electrodes deposited on the microstructures by lift-off. The microstructures have a resistivity of approximately 9.5 x 10(-3) Omega cm after exposure to an electron dose of 0.1 C cm(-2). The method may have applications in the generation and electrical contacting of organic electronics, organic photovoltaics, and lab-on-a-chip devices.

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Dose dependences of the optical properties of fullerene films subjected to the electron irradiation

Cited by 7 publications

References 9 publications

Tuning the electronic band structure of PCBM by electron irradiation

Tuning the electronic band structure of PCBM by electron irradiation

Thin polymerized C60 coatings deposited in electrostatic field via electron-beam dispersion of fullerite

Direct Electron‐Beam Writing of Highly Conductive Wires in Functionalized Fullerene Films

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