Dose-Rate Dependence of the Total-Ionizing-Dose Response of GaN-Based HEMTs

Jiang, Rong; Zhang, En Xia; McCurdy, Mike; Wang, Peng Fei; Gong, Huiqi; Yan, Donghang; Schrimpf, R.D.; Fleetwood, D.M.

doi:10.1109/tns.2018.2873059

Cited by 30 publications

(14 citation statements)

References 31 publications

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“…This has a direct consequence in establishing a charge transfer in accordance with the trap assisted tunnelling (TAT). The TAT is dictated by the evolution of radiation induced traps that favor hole trapping due to a reduction in the barrier height [28][29][30][31][32][49] [53][54]. It effectively reduces the channel depletion as observed under the Source electrode at GaN top and graded AlGaN layers.…”

Section: B Impact On DC Characteristicsmentioning

confidence: 99%

“…In this regard, several attempts have been made to assess the reliability of GaN HEMTs in the presence of ionizing radiations for specific applications in nuclear reactors and space. Several studies have also reported the sensitivity of GaN HEMT devices towards the ionizing X -Rays [26][27][28] and γ -Rays [28][29][30][31][32]. The impact of γ -Rays irradiation on reported HEMT architectures is compiled in Table I [28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

“…Several studies have also reported the sensitivity of GaN HEMT devices towards the ionizing X -Rays [26][27][28] and γ -Rays [28][29][30][31][32]. The impact of γ -Rays irradiation on reported HEMT architectures is compiled in Table I [28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

“…The MOSHEMT architectures, on the other hand, demonstrate a significant shift in the V TH which is enhanced primarily due to the charging of the insulator at MOS/MIS Gate contact. The OFF -state current (I OFF ) for both X -Ray [26][27][28] and γ -Ray [28][29][30][31][32] irradiation as reported show significant degradation, which causes a major concern regarding the reliability issues of such devices for prolonged use.…”

Section: Introductionmentioning

confidence: 99%

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Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

et al. 2022

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This work investigates the cumulative dose 60 Co gamma (γ) -ray irradiation effects on enhancement mode HEMT devices inheriting 3D -Electron and Hole Gases for dosimeter applications. The devices are irradiated through a 60 Co source and demonstrate the enhancement in the drain current metrics. To elucidate, the said devices were irradiated through different mechanisms and the Compton effect was investigated through contour plots via TCAD simulations. The degradation of Schottky Gate contact and insulator charging affects the 2D -Hole Gas at the GaN cap and thereby affects the bottleneck at the 3DEG sheet. This significantly affects the OFF -state leakage components of the said device and can therefore be exploited for potential use in sensing and dosimeter applications. The leakage components can be exploited further to improve the linearity of the dosimeter by considering different grading profiles of the AlGaN layer. In this regard, a workflow for optimizing the sensitivity and linearity of the dosimeter through different graded profiles is also presented. Amongst all, gaussian graded profiles have been identified as the best -case scenario considering the sensitivity and exhibiting a linear operation.

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Section: B Impact On DC Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

et al. 2022

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“…The enhanced mode is mainly realized in AlGaN/GaN HEMT by the following: p-GaN [1,2], F ion implantation [3,4], MIS HEMT [5,6], and cascode structure [7,8]. The total ionizing dose and displacement damage effect on GaN HEMT have been studied by many researchers [9][10][11][12][13][14]. Because there is no gate dielectric layer in AlGaN/GaN HEMT, GaN HEMT is less sensitive to the TID effect.…”

Section: Introductionmentioning

confidence: 99%

The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

et al. 2021

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An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

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