Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot

Structural and electrical characterization of ZnO-based homojunctions

“…The Richardson constant is usually determined from the intercept of ln(J 0 /T 2 ) vs. 1000/T graph [33,38,39]. The experimental data are shown to fit asymptotically with a straight line at higher temperatures only, yielding a Richardson constant (A*) of 0.062 A cm −2 K −2 , which is much lower than the known theoretical value of 32 A cm −2 K −2 for ZnO (Fig.…”

“…In other words, the current of the diode will flow preferentially through the lower barriers in the potential distribution. A* value obtained from the temperature dependence of the I-V characteristics may be affected by the lateral inhomogeneity of the barrier, and the fact that the different value from the theoretical one may be connected to a value of the real effective mass that is different from the calculated one [33,38,39,[43][44][45][46][47][48][49].…”

Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering

“…Thus may be a separate barrier distribution for each one temperature and each distribution may represented with a mean barrier height b and its standard deviation . If one assumes as a parameter that is independent from temperature, then will have a mean value for each Gaussian distribution region that has been considered until now [12,16,[20][21][22][23].…”

“…The single [12] or multi-Gaussian [16] distribution model is based on the parallel conduction model that can depict barrier anomalies successfully. The single-Gaussian distribution model is insufficient to explain inhomogeneity in case of a multi barrier distribution [16,23]. A model to comment on discrete multi Gaussian distributions was proposed by Yu-Long et al [16] and much more generalized form on Richardson plot of the multi-Gaussian distribution has been developed by Gülnahar and Efeoglu [23].…”

“…GaTe is a relatively known semiconductor compound [21][22][23][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41]45,47] and exist successful but limited Schottky contact studies [21][22][23][37][38][39][40] made using GaTe. GaTe belongs to the III-VI group in the periodic table and has a layered nature.…”