Double diffused gallium arsenide transistors

Becke, H.W.; Flatley, D.; Stolnitz, D.

doi:10.1109/t-ed.1963.15242

Cited by 1 publication

(4 citation statements)

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“…Specifically, it should also be noted that the results quoted are not representative of the potential usefulness of doped oxide sources; for practical applications, the reader is referred to ref. (1)(2)(3)(4)(5)(6).…”

Section: Discussion: Relevance To Anodic Oxide Diffusion Sourcesmentioning

confidence: 99%

“…Using the Laplace transtormation ( 12) the simultaneous partial aifferential Eq. [1] and [2] have been solved for the concentration in the phase 2, C2, subject to the initial conditions [3] and [4] and the boundary conditions [5] to [8]. The solution is…”

Section: Model and Solution Of The Dif]usion Equationsmentioning

confidence: 99%

“…Melt grown crystals do not show sufficient reproducibility of doping or adequate uniformity in these dimensions. The close-spaced growth of epitaxial GaAs has been discussed by a number of authors (1)(2)(3)(4)(5). Using H20 or HCI as the transport agent this method has produced rapid growth rates (circa 1 mm/hr).…”

Section: Introductionmentioning

confidence: 99%

“…In recent years interest has grown in the use of doped oxide films as diffusion sources for device fabrication in semiconductors (1)(2)(3)(4)(5)(6). These sources can be deposited by a variety of means, such as anodization, pyrolytic decomposition, or reactive sputtering, and offer the advantages of control of the dopant concentration and of low deposition temperatures which do not alter pre-existing diffusion profiles in the semiconductor substrate.…”

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confidence: 99%

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Diffusion from a Plane, Finite Source into a Second Phase with Special Reference to Oxide-Film Diffusion Sources on Silicon

Owen

Schmidt²

1968

J. Electrochem. Soc.

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A model is set up for the diffusion from a source of finite thickness into an adjacent second phase of semi‐infinite extent. With the principal assumption of no diffusion in or out of the system, a solution is obtained for the diffusion profile in the second phase. It is also assumed that the diffusion coefficients are independent of concentration, but segregation at the inter‐phase boundary is taken into account and so also, to a first approximation, is the possibility of precipitation or reaction at the interface. The model predicts a change in the profile from an ERFC to Gaussian shape depending on whether the diffusion length in the source is much less than or much greater than its thickness, i.e., as the diffusion time increases.The theoretical predictions of the model are compared to tracer diffusion results from phosphorus doped anodic oxide sources on silicon. These experiments were carried out with unprotected (no undoped SiO2 film covering the source) oxide sources in a sealed quartz tube. Thus the phosphorus initially lost by out‐diffusion could not escape from the system altogether, and it is shown that these conditions approximated the boundary condition of no out diffusion. The diffusion results obtained in this way are in agreement with the model.

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