Double Electron Transport Layer and Optimized CsPbI<sub>3</sub> Nanocrystal Emitter for Efficient Perovskite Light-Emitting Diodes

Sun, Sheng; Lu, Min; Guo, Jie; Yu, William W.; Shi, Zhifeng; Sun, Guang; Zhang, Yu

doi:10.1021/acs.jpcc.0c08769

Cited by 25 publications

(11 citation statements)

References 45 publications

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“…[29] The present Mn 2þ : CsPbI 3 LED is a typical inverted architecture, whose optoelectronic performance is usually lower than that of the PeLEDs with the conventional device structure (Table S4, Supporting Information). [14,15,19,[30][31][32][33][34] The luminance and operating stability (T 50 value) of the present Mn 2þ : CsPbI 3 PeLED after inserting a LiF buffer layer are comparable with those of the CsPbI 3 -based PeLEDs with the inverted device structure previously reported (Table 2). [16][17][18]25,26,[35][36][37][38][39] Particularly, the device stability (T 50 lifetime) at a high operating luminance (225 min) is better than most of the reported CsPbI 3 PeLEDs.…”

Section: Resultssupporting

confidence: 56%

Mn²⁺‐Doped CsPbI₃ Nanocrystals for Perovskite Light‐Emitting Diodes with High Luminance and Improved Device Stability

Liu

Jiang

Wang

et al. 2021

Advanced Photonics Research

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Cubic α‐CsPbI3 has promising applications in the optoelectronic field for its excellent properties. However, α‐CsPbI3 black phase is instable at room temperature and easily converts into nonluminescent yellow orthorhombic phase (δ‐CsPbI3). Herein, the stability of α‐CsPbI3 is significantly improved by incorporating Mn2+ dopants into the perovskite lattice. Mn2+: CsPbI3 has essentially the same crystal structure as the parent α‐CsPbI3, and Mn2+ doping can promote photoluminescence quantum yield (PLQY) from 55% to 93%. Importantly, Mn2+: CsPbI3 can maintain 60% PLQY after exposing in air for 45 days, whereas the undoped CsPbI3 completely loses its luminescence in 10 days. First‐principles calculations testify that improved stability and optical properties of Mn2+: CsPbI3 are primarily attributed to the increased formation energy and tolerance factor. Accordingly, the luminance, external quantum efficiency (EQE), and T 50 lifetime of Mn2+: CsPbI3 perovskite light‐emitting diode (PeLED) reach 1066 cd m−2, 1.8%, and 2500 s, whereas the values for the undoped counterpart are only 415 cd m−2, 0.6%, and 140 s, respectively. In addition, it is evidenced that introducing a LiF buffer layer between hole transport layer and perovskite emissive layer can further boost the device performance, particularly, the luminance and T 50 lifetime achieve 1394 cd m−2 and 225 min at 140 cd m−2.

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Section: Resultssupporting

confidence: 56%

Mn²⁺‐Doped CsPbI₃ Nanocrystals for Perovskite Light‐Emitting Diodes with High Luminance and Improved Device Stability

Liu

Jiang

Wang

et al. 2021

Advanced Photonics Research

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“…Transmission electron microscopy and high-resolution transmission electron microscopy have been extensively used to investigate perovskite lattice spacing [115,116] and lattice structure (e.g., core-shell structure) [117,118] as well as, phase [119,120] and size distribution [121,122] of perovskite nanocrystals (NCs). In particular, scanning transmission electron microscopy (STEM) combined with energy dispersive X-ray (EDX) spectroscopy has been employed to probe ions distribution in individual grains [31,123] or in an entire PeLED.…”

Section: Electron Microscopy and Spectroscopymentioning

confidence: 99%

Ion Migration in Perovskite Light‐Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering

et al. 2022

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sivation), [18,19] the record EQEs of PeLEDs have reached 12.3%, [20] 28.1%, [21] 23%, [22] and 22.2% [23] for blue, green, red, and infrared emission, respectively. Despite the remarkable progress in improving the performance of PeLEDs, the devices still suffer from poor operational stability and rapid decay over time. Although encapsulation of the devices can protect them against moisture and oxygen, [24] internal heat-or electric field-driven defect generation processes, which are often linked to ion migration, could cause severe degradation of electroluminescence.Ion motion in MHPs was initially observed in perovskite solar cells (PSCs) and manifested as an anomalous dielectric response at low frequency and hysteresis in the current-voltage curve. [25] Extensive studies have been performed to investigate the properties of the ions, [25,26] the ion distribution in PSCs under dark and illumination, [27] and the electronic-ionic coupling and its impact on device operation. [28] PSCs differ from PeLEDs in that the fabrication of PeLEDs typically involves the use of largely excess organic halide salts; a portion of these halides do not participate in the perovskite lattice but instead reside on the surfaces and grain boundaries, thus inducing additional mobile ions in the PeLEDs. [29][30][31] More importantly, the electric field across the very thin perovskite layer (typically tens of nanometers) in a PeLED is much stronger than the field in a PSC. Because of these factors and the effects of local heating, ion migration has a substantial effect on PeLEDs operation. Indeed, numerous recent studies have reported ion-induced degradation of PeLEDs. [31][32][33][34][35][36] Accordingly, many studies on understanding, characterizing, and preventing ion generation and migration in PeLEDs have been performed in the last few years.Herein, we perform a systematic review of the origin, movement mechanism, characterization, effects on device performance and stability, and management of ion migration in PeLEDs. As presented in Scheme 1, the review begins by introducing the origins of ionic defects by considering the structural, compositional, and processing characteristics of perovskite emissive layers. Then, the transport dynamics of ions are described with a focus on three factors: Migration activation energy, external stimulus (e.g., electric field and Joule heating), and pathways (i.e., bulk vs grain boundaries or surfaces). Third, the characterization approaches for probing ion migration in In recent years, perovskite light-emitting diodes (PeLEDs) have emerged as a promising new lighting technology with high external quantum efficiency, color purity, and wavelength tunability, as well as, low-temperature processability. However, the operational stability of PeLEDs is still insufficient for their commercialization. The generation and migration of ionic species in metal halide perovskites has been widely acknowledged as the primary factor causing the performance degradation of PeLEDs. Herein, this topic is systematically d...

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“…Depending on the ultrahigh photoluminescence quantum yield (PLQY), narrow emission FWHM and highly emissive tunability, the 0D perovskite nanomaterials with quantum confinement size have attracted much attentions and made great strides in the past several years, [19,[67][68][69][70][71][72][73][74] such as the successful display applications recently reported by Zhong et al [75][76] Except for the size control achieved within the synthesis procedure (thermal injection, [68] ligand-assisted reprecipitation, [19] and so on), ion exchange provides an additional path to modify the physicochemical properties of 0D halide perovskites. We will discuss the ion exchange for 0D halide perovskites according to the different crystallographic components in this section.…”

Section: Ion Exchange For Zero-dimentional (0d) Perovskite Nanomaterialsmentioning

confidence: 99%

Ion exchange for halide perovskite: From nanocrystal to bulk materials

Jiang

Cui

et al. 2021

Nano Select

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Halide perovskite, an ionic semiconductor, with the typically structural composition of ABX 3 has become the extremely popular star in optoelectronics due to its superior photophysical properties and easily solution processing. In comparison with the traditional semiconductors, the perovskite possesses a low crystal formation energy with facile solution synthesis, which results into its soft and dynamic crystal lattice. Therefore, the post-synthetic composition tuning via ion exchange has been proved to be an effective technique to introduce heteroatoms into perovskite lattice. In this review, we summarize the recent progress on ion exchange of halide perovskites, including mechanisms, methods, as well as different scales from low-dimensional nanoscale to bulk crystal. Besides, we also briefly discuss the prospective of ion exchange for halide perovskites, and hope it benefit for the structural design and compositional optimization in halide perovskites for various optoelectronic applications.

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Double Electron Transport Layer and Optimized CsPbI₃ Nanocrystal Emitter for Efficient Perovskite Light-Emitting Diodes

Cited by 25 publications

References 45 publications

Mn²⁺‐Doped CsPbI₃ Nanocrystals for Perovskite Light‐Emitting Diodes with High Luminance and Improved Device Stability

Mn²⁺‐Doped CsPbI₃ Nanocrystals for Perovskite Light‐Emitting Diodes with High Luminance and Improved Device Stability

Ion Migration in Perovskite Light‐Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering

Ion exchange for halide perovskite: From nanocrystal to bulk materials

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Double Electron Transport Layer and Optimized CsPbI3 Nanocrystal Emitter for Efficient Perovskite Light-Emitting Diodes

Cited by 25 publications

References 45 publications

Mn2+‐Doped CsPbI3 Nanocrystals for Perovskite Light‐Emitting Diodes with High Luminance and Improved Device Stability

Mn2+‐Doped CsPbI3 Nanocrystals for Perovskite Light‐Emitting Diodes with High Luminance and Improved Device Stability

Ion Migration in Perovskite Light‐Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering

Ion exchange for halide perovskite: From nanocrystal to bulk materials

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Double Electron Transport Layer and Optimized CsPbI₃ Nanocrystal Emitter for Efficient Perovskite Light-Emitting Diodes

Mn²⁺‐Doped CsPbI₃ Nanocrystals for Perovskite Light‐Emitting Diodes with High Luminance and Improved Device Stability

Mn²⁺‐Doped CsPbI₃ Nanocrystals for Perovskite Light‐Emitting Diodes with High Luminance and Improved Device Stability