2010
DOI: 10.1021/nl1010965
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Double-Gate Nanowire Field Effect Transistor for a Biosensor

Abstract: A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel potential. Therefore, the detection sensitivity was enhanced by the use of G2. By applying weakly positive bias to G2, the sensing window was significantly broadened compared to the case of employing G1 only, which is nominally used in conventional nanowire FET-based biosensors… Show more

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Cited by 167 publications
(103 citation statements)
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“…The application of additional lateral gates has been shown useful in tuning the carrier concentration of the device and pursuit of an optimal gate configuration is an active area of research. [39][40][41] There is also significant interest in the development of carbon-based devices which do not have an oxide layer such as graphene or carbon-nanotube devices. 14,42 The advantage of these devices is stated to be potential sensitivity enhancement via (i) direct contact with analyte (ii) the size of the material being comparable to the size of the analyte.…”
Section: Operation Of Field-effect Sensorsmentioning
confidence: 99%
“…The application of additional lateral gates has been shown useful in tuning the carrier concentration of the device and pursuit of an optimal gate configuration is an active area of research. [39][40][41] There is also significant interest in the development of carbon-based devices which do not have an oxide layer such as graphene or carbon-nanotube devices. 14,42 The advantage of these devices is stated to be potential sensitivity enhancement via (i) direct contact with analyte (ii) the size of the material being comparable to the size of the analyte.…”
Section: Operation Of Field-effect Sensorsmentioning
confidence: 99%
“…However, it has difficulties concerning position and shape control. 34 On the contrary, the top-down approach can be compatible with the established complementary metal oxide semiconductor (CMOS) lithographic manufacturing technologies, capable of controlling the SiNW array in well-defined shape. In our study, the monocrystalline SiNW FET sensor chip was fabricated by a top-down approach, and used as a label-free biosensor for the multiplexed detection of OSCC biomarkers.…”
Section: Introductionmentioning
confidence: 99%
“…Special focus will be set on wireshaped nanostructures due to their potential applications in circuits or nanodevices [5,6], as membranes [7], biosensors [8][9][10], transparent electrodes [11], waveguides [12] or antennae in photochemistry [13].…”
Section: Introductionmentioning
confidence: 99%