Double-Grafted PET Fiber Material to Remove Airborne Bacteria with High Efficiency

Abstract

Air pollution caused by bacteria and viruses has posed a serious threat to public health. Commercial air purifiers based on dense fibrous filters can remove particulate matter, including airborne pathogens, but do not kill them efficiently. Here, we developed a double-grafted antibacterial fiber material for the high-efficiency capture and inactivation of airborne microorganisms. Tetracarboxyl phthalocyanine zinc, a photosensitizer, was first grafted onto the polyester (PET) fiber, followed by coating with chitosan on the surface of PET fiber to make a double-grafted fiber material. Under the irradiation of light with a specific wavelength (680 nm), double-grafted fiber materials killed up to 99.99% of Gram-positive bacteria and Gram-negative bacteria and had a significant antibacterial effect on drug-resistant bacteria. The double-grafted PET fiber showed broad-spectrum antibacterial activities and was capable to inactivate drug-resistant bacteria. Notably, in filtration experiments for airborne bacteria, this double-grafted PET fiber demonstrated a high bacteria capture efficiency (95.68%) better than the untreated PET fiber (64.87%). Besides, the double-grafted PET fiber was capable of efficiently killing airborne bacteria. This work provides a new idea for the development of air filtration materials that can efficiently kill airborne pathogen and has good biosafety.

Recent Progress in Inorganic Afterglow Materials: Mechanisms, Persistent Luminescent Properties, Modulating Methods, and Bioimaging Applications

“…They also revealed the bandgap engineering and trap/defect related mechanism response to the enhanced luminescence intensities or persistent times. Besides, other tuning reports on composition substitution have been published, such as the substitution of Si 4+ with Ge 4+ in Ca 2 Ga 2 (Si 1‐x Ge x )O 7 :Pr 3+ ,Yb 3+ and Lu 2 CaMg 2 (Si 1‐x Ge x ) 3 O 12 :Ce 3+ phosphors, [ 182 ] the substitution of Ge 3+ with Si 4+ in Mg 3 Y 2 (Ge 1‐x Si x ) 3 O 12 :Ce 3+ phosphor, [ 34 ] the substitution of Gd 3+ with La 3+ in Gd 1‐x La x AlO 3 :Ce 3+ ,Ln 3+ phosphor, [ 141c ] and the substitution of Y 3+ with Mg 2+ in Y 1.94‐x Mg x O 2 S:Ti 2+ phosphor, [ 183 ] all of which got special compositions to raise the persistent properties obviously. The persistent initial brightness and duration time even have been increased by 52 times and 74 times.…”

“…[ 1a,33 ] Sometimes, the trap levels are distributed over a wide range of energies continuously. [ 25a,b,34 ] Accordingly, the possible mechanism of PL can be described as follows. (1)Under the excitation of radiation (UV/Vis/NIR light, electron beam, X‐ray, etc.) for sufficient time, electrons from the valence band or ground level of emitters are promoted to the conduction band (Process 1 and 2).…”

“…In special crystal field, the lowest energy state of 4f can be split into 2 F 5/2 and 2 F 7/2 with separation energy of 2250 cm ‐1 by spin‐orbit interaction, [ 60 ] and 5d level may split into several sublevels of 5d 1 , 5d 2 and 5d 3 et al. [ 34 ] Thereby, the emission bands correspond to the 5d 1 →4f transitions (Figure 2c).…”

“…For highly efficient PL, the trap depth and band gap in host should be appropriate. [ 34 ] Smart “bandgap engineering” technique which can adjust the band gap, energy gap from the excited state of the activator to the conduction band, and energy gap from the trap state to conduction band has been proposed, resulting in simultaneous regulation of the excitation wavelength, brightness and time of afterglow. The groups of Dorenbos, Ueda, and Polozkov provided some proof tests by tuning the components of Gd 1−x La x AlO 3 and Y 3 Al 5‐x Ga x O 12 host materials in succession.…”

“…According to the outstanding luminescent properties, enormous opportunities for persistent phosphors in diverse application fields have been discovered, for example, ZnGa 2–x (Mg/Ge) x O 4 :Mn 2+ /Mn 4+ , Mg 2 GeO 4 :Mn 2+ , Zn 2 GeO 4 :Mn, and Gd 2 O 2 S:Eu 3+ /Ti 4+ used for anti‐counterfeiting, [ 54,119,121,180b ] ZnGa 2 O 4 :Cr 3+ used for optical thermometer, [ 112 ] Gd 3 Al 2 Ga 3 O 12 :Ce 3+ , Lu 2 CaMg 2 (Si 1–x Ge x ) 3 O 12 :Ce 3+ and Mg 3 Y 2 (Ge 1–x Si x ) 3 O 12 :Ce 3+ used for LED, [ 34,61a,182b ] Zn 2 GeO 4 :Mn,Li,K used for imaging of latent fingerprints, [ 99b ] ZnGa 2 O 4 :Cr and CaZnOS:Bi 3+ ,Mn 2+ used for sensor, [ 9a,139,231 ] ZnGa 2 O 4 :Cr, Zn 2 GeO 4 :Sr and Zn 2 GeO 4 :Mn used for detection, [ 9d,130b ] NaMgF 3 :Tb 3+ @NaMgF 3 :Tb 3+ , NaYF 4 :Ln 3+ @NaYF 4 , MgGeO 3 :Mn 2+ ,Yb 3+ , and NaYGeO 4 :Bi 3+ ,Eu 3+ used for optical information storage. [ 7a,106a,160c,245 ]…”