Double Heterojunction Silicon Solar Cell by NiO/Si and Si/Ti02 Interfaces

Pei, Zingway; Lee, Yu-Tsu; Huang, Weian

doi:10.1109/pvsc.2017.8366326

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) 2017

DOI: 10.1109/pvsc.2017.8366326

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Double Heterojunction Silicon Solar Cell by NiO/Si and Si/Ti02 Interfaces

Zingway Pei

Yu-Tsu Lee

Weian Huang

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2021

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Design and simulation of double-heterojunction solar cells based on Si and GaAs wafers

Hossain

2021

J. Phys. Commun.

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This article demonstrates the novel designs of Si and GaAs wafer-based double-heterojunction (DH) solar cells using SCAPS-1D simulator. Simple five-layer solar cells are proposed here: cells comprised of a cathode metal layer, three layers of semiconductor materials in the III–V, II–VI and group IV families--and a layer of anode metal. The device structures have been optimized for the analysis of the power-conversion efficiency (PCE) of the Si and GaAs solar cells considering high defect densities at and near each heterojunction. The PCEs predicted are 38% and 38.9% for n-ZnSe/p-Si/p +-Al0.8Ga0.2Sb and n-ZnSe/p-GaAs/p +-AlAs0.9Sb0.1 cells, respectively which stay entirely within the PCE limits set by the Shockley–Queisser theory of multi-junction cell. These results reveal that high efficiency and hence cost-effective Si and GaAs wafer-based DH solar cells can be fabricated in the near future.

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Design and simulation of double-heterojunction solar cells based on Si and GaAs wafers

Hossain

2021

J. Phys. Commun.

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Double Heterojunction Silicon Solar Cell by NiO/Si and Si/Ti02 Interfaces

Cited by 1 publication

References 6 publications

Design and simulation of double-heterojunction solar cells based on Si and GaAs wafers

Design and simulation of double-heterojunction solar cells based on Si and GaAs wafers

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