Double injection currents in p-i-n diodes incorporating self-assembled quantum dots

Abstract

Abstract. We study p-i-n diodes incorporating InAs/AlAs self-assembled quantum dots (QDs) to probe the electron and hole levels of the dots. Comparative analysis of capacitance-voltage (C-V), current-voltage (I-V) and electroluminescence (EL) measurements shows that p-i-n structures could be successfully used as a quantum dots spectrometer.

Temperature dependence of dark current in a p–i–n photodiode incorporating a resonant tunneling structure

“…Besides revealing many interesting fundamental properties, p–i–n GaAs‐based structures incorporating quantum wells (QWs) have been proposed and successfully used in a whole emerging class of enhanced functionality optoelectronic devices. These include light modulators, high‐performance lasers, light‐emitting diodes (LEDs), photodetectors, resonant tunneling devices as well as solar cells 1–9. Their many advantages include high mobility, efficient and fast recombination rates, and the possibility to conveniently tailor the intrinsic region so as to optimize device parameters such as quantum efficiency and high speed of operation.…”

“…The insertion of a single or multiple QW(s) was shown, however, to affect the dark current in these p–i–n structures 4, 5. Since the operation conditions of a p–i–n based photodetector depend on the dark properties of the device, understanding the dark electrical conduction mechanisms is, therefore, an important step in the task of improving devices efficiency.…”

Квантовые осцилляции релаксации фотопроводимости в p-i-n-гетеродиодах GaAs/InAs/AlAs

“…В сере-дине каждой из этих областей были выращены слои самоорганизованных квантовых точек (QDs) InAs. Более детально такие структуры описаны в работах [10,[14][15][16][17]. Зонная диаграмма активной области структуры А при напряжении < 1.5 B и слабом освещении схематически показана на pис.…”