2018
DOI: 10.1063/1.5039594
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Double-layer heterostructure of graphene/carbon nanotube films for highly efficient broadband photodetector

Abstract: Graphene-semiconducting single-wall carbon nanotubes' (graphene-s-SWCNTs) thin-film photodetector based on a double-layer stacked heterostructure was fabricated. The carbon-based heterostructure exhibits excellent long-range van der Waals interactions. The as-fabricated device was demonstrated with an ultra-broadband photodetection characteristic with a high responsivity of 78 A/W at a visible wavelength and a fast response time of 80 μs. Moreover, the high photoconductive gain based on the photogating effect … Show more

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Cited by 26 publications
(11 citation statements)
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“…As a special example in phototransistor devices, photogating phototransistors stem from the photogating effect, which modulates devices’ conductance by phonon-induced traps. Several graphene-based structures [ 48 , 80 ] have been explored as cooling enhanced their photogating performance. Here, we focus on photoelectric devices with application in solar cells and photodetectors, especially infrared (IR) detectors consisting of near-infrared (NIR, 0.7–1 μm), short-wavelength infrared (SWIR, 1–3 μm), mid-wavelength infrared (MWIR, 3–5 μm) and long-wavelength infrared (LWIR, 8–14 μm) photodetectors.…”
Section: Materials With Cooling-enhanced Effectsmentioning
confidence: 99%
See 1 more Smart Citation
“…As a special example in phototransistor devices, photogating phototransistors stem from the photogating effect, which modulates devices’ conductance by phonon-induced traps. Several graphene-based structures [ 48 , 80 ] have been explored as cooling enhanced their photogating performance. Here, we focus on photoelectric devices with application in solar cells and photodetectors, especially infrared (IR) detectors consisting of near-infrared (NIR, 0.7–1 μm), short-wavelength infrared (SWIR, 1–3 μm), mid-wavelength infrared (MWIR, 3–5 μm) and long-wavelength infrared (LWIR, 8–14 μm) photodetectors.…”
Section: Materials With Cooling-enhanced Effectsmentioning
confidence: 99%
“…( a 1 ) Tellurium nanoflakes (adapted from [ 47 ], with permission from the American Chemical Society, 2018). ( a 2 ) Graphene (adapted from [ 48 ], with permission from the American Institute of Physics, 2018). ( b ) Transition metal dichalcogenide (adapted from [ 49 ], with permission from the American Institute of Physics, 2019).…”
Section: Figurementioning
confidence: 99%
“…In addition, in the junction formed by graphene and SWCNT, efficient charge transfer has been identified. 17,18 At the junction of these two forms of carbon allotropes, both with sp2-carbons, the electrostatic coupling force can be largely enhanced under UV−NIR illumination. By optimizing the physicochemical structure of the interfacial properties, phototransistors with the high R i and fast response characteristics are realized.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Combining different dimensional materials together to form novel nanostructures is a prospective way to achieve the nanodevices operating with novel principles. Based on this approach, combining graphene with other carbon allotropes had aroused widespread interest in forming novel hybrid nanostructures to realize excellent chemical and physical properties. , Recently, a planar SWCNT/graphene heterojunction is fabricated to obtain high R i and fast response. In addition, in the junction formed by graphene and SWCNT, efficient charge transfer has been identified. , At the junction of these two forms of carbon allotropes, both with sp2-carbons, the electrostatic coupling force can be largely enhanced under UV–NIR illumination. By optimizing the physicochemical structure of the interfacial properties, phototransistors with the high R i and fast response characteristics are realized .…”
Section: Introductionmentioning
confidence: 99%
“…In addition, a broadband Schottky photodiode array with improved photoresponse has been developed based on the graphene/semiconducting SWCNT film [ 24 ]. A graphene-semiconducting SWCNTs thin-film photodetector based on a double-layer stacked heterostructure was fabricated by Cao et al [ 25 ]. This device demonstrates the possibility of photodetection with a high sensitivity of 78 A/W in the visible region of the spectrum.…”
Section: Introductionmentioning
confidence: 99%