Double-layered Structure of Surface Modification of Low-k Dielectrics Induced by He Plasma

Yanai, Kohsuke; Hasebe, Tadayoshi; Sumiya, Kouji; Oguni, Seiki; Koga, Katsumi

doi:10.1557/proc-863-b2.3

Cited by 8 publications

(6 citation statements)

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“…NWA 2999 is a unique angrite and has an HH-ED-XRF Fe/Mn ratio of 120 ± 4. This is higher than the angrite average value of 95 ± 16 (Mittlefehldt and Lindstrom 1990, Yanai 1994, Mittlefehldt et al 2002, Gellissen et al 2007, Shirai et al 2009, Keil 2012. Although having an oxygen isotope composition characteristic of the angrite group (Δ 17 O = -0.072 ± 0.007, Greenwood et al 2005), it has higher FeO and MgO contents relative to other angrites , Gellissen et al 2007).…”

Section: Discussion Fe/mn Ratiomentioning

confidence: 76%

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Parentage Identification of Differentiated Achondritic Meteorites by Hand‐held Energy Dispersive X‐Ray Fluorescence Spectrometry

Gemelli

Rocco

Folco

et al. 2017

Geostandard Geoanalytic Res

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We evaluate the potential of a hand-held energy dispersive XRF spectrometer for the preliminary classification of non-chondritic differentiated meteorites. The studied achondrites include nine lunar meteorites, seventeen Martian meteorites, five angrites and eighteen meteorites from asteroid 4 Vesta. Analytical precision and accuracy was tested on thirty-nine terrestrial igneous rock slabs with a wide range of composition. Replicate analyses, performed on the studied meteorites, show that Fe/Mn values together with Si and Ca/K ratio can be used in the discrimination of different achondrite groups. Fusion crust's Fe/Mn values of meteorites from Vesta and Mars are indistinguishable from those of the interior implying that even measurements on the fusion-crusted external surface could be sufficient to pigeonhole non-chondritic meteorites. Hand-held energy dispersive XRF spectrometer is a non-destructive but very effective technique for preliminary classification of achondrites in the field and in laboratory and for the identification of mislabelled meteorites in museum collections

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Section: Discussion Fe/mn Ratiomentioning

confidence: 76%

“…Shaded areas represent the 68% confidence limit. Data are from Ref (Mittlefehldt and Lindstrom 1990, Yanai 1994, Mittlefehldt et al 2002, Gellissen et al 2007, Shirai et al 2009, Keil 2012(Dreibus et al 1996, Warren et al 1996, Lodders and Fegley 1998, Folco et al 2000, Rubin et al 2000,.…”

mentioning

confidence: 99%

Parentage Identification of Differentiated Achondritic Meteorites by Hand‐held Energy Dispersive X‐Ray Fluorescence Spectrometry

Gemelli

Rocco

Folco

et al. 2017

Geostandard Geoanalytic Res

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“…One of the effective strategies to reduce bulk low-k damage is surface activation to trap the radicals at the surface. The reduction of O and NO 2 plasma damage by using He plasma pretreatment in a plasma-enhanced chemical vapor deposition ͑PECVD͒ chamber were reported by Wang et al 7 and Yanai et al, 8 respectively. However, the mechanism of plasma damage reduction was not discussed.…”

mentioning

confidence: 79%

“…al. 8 They found, using atomic force microscopy, that the mean surface roughness ͑MSR͒ was in the range of 0.18-0.39 nm. The as-deposited film showed an MSR of 0.39 nm.…”

Section: ͓3͔mentioning

confidence: 99%

“…With irradiation with He plasma at 100 W, the surface became smoother ͑MSR = 0.18 nm͒; when the plasma power was increased to 500 W ͑MSR = 0.31 nm͒, the surface became rougher. Yanai et al 8 presumed that the rougher surface is due to surface carbon depletion at the first monolayer. No correlation between the surface roughness and the damage reduction effect of He plasma was found.…”

Section: ͓3͔mentioning

confidence: 99%

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Effects of He Plasma Pretreatment on Low-k Damage during Cu Surface Cleaning with NH[sub 3] Plasma

Urbanowicz

Shamiryan

Zaka

et al. 2010

J. Electrochem. Soc.

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In this study, the effect of the sequential He and NH 3 plasma treatments on a chemical vapor deposition SiOC:H low-k dielectric is evaluated in the wide range of experimental conditions. Results show that the active NH 3 plasma radicals penetrate the porous low-k bulk and remove the hydrophobic Si-CH 3 groups, which leads to hydrophilization and results in the degradation of dielectric properties. The implementation of He plasma pretreatment reduces the damage imposed by the NH 3 plasma by a stimulation of the surface recombination of active radicals from NH 3 plasma. He plasma causes a surface modification of 10-20 nm presumably due to the energy transfer from the extreme UV photons and the 2 1 S He metastable atoms to the low-k structure. The plasma damage reduction is proportional to He plasma density and the treatment time. The mechanism of plasma damage reduction is explained on the basis of the Knudsen diffusion mechanism and random walk theory.

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Plasma processing of low-k dielectrics

Baklanov¹,

Marneffe²,

Shamiryan³

et al. 2013

Journal of Applied Physics

279

241

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This paper presents an in-depth overview of the present status and novel developments in the field of plasma processing of low dielectric constant (low-k) materials developed for advanced interconnects in ULSI technology. The paper summarizes the major achievements accomplished during the last 10 years. It includes analysis of advanced experimental techniques that have been used, which are most appropriate for low-k patterning and resist strip, selection of chemistries, patterning strategies, masking materials, analytical techniques, and challenges appearing during the integration. Detailed discussions are devoted to the etch mechanisms of low-k materials and their degradation during the plasma processing. The problem of k-value degradation (plasma damage) is a key issue for the integration, and it is becoming more difficult and challenging as the dielectric constant of low-k materials scales down. Results obtained with new experimental methods, like the small gap technique and multi-beams systems with separated sources of ions, vacuum ultraviolet light, and radicals, are discussed in detail. The methods allowing reduction of plasma damage and restoration of dielectric properties of damaged low-k materials are also discussed.

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Double-layered Structure of Surface Modification of Low-k Dielectrics Induced by He Plasma

Cited by 8 publications

References 0 publications

Parentage Identification of Differentiated Achondritic Meteorites by Hand‐held Energy Dispersive X‐Ray Fluorescence Spectrometry

Parentage Identification of Differentiated Achondritic Meteorites by Hand‐held Energy Dispersive X‐Ray Fluorescence Spectrometry

Effects of He Plasma Pretreatment on Low-k Damage during Cu Surface Cleaning with NH[sub 3] Plasma

Plasma processing of low-k dielectrics

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