Double Layers Omega FETs with Ferroelectric HfZrO<sub>2</sub> for One-Transistor Memory

Chen, K.-T.; Lo, Chieh; Lin, Yun Lung; Chueh, C.-Y.; Chang, Chienliu; Siang, G.-Y.; Tseng, Yi-Ju; Yang, Y.-J.; Hsieh, Fan-Chun; Chang, Shao Hsi; Liang, H.; Chiang, S.-H.; Liu, J.-H.; Lin, Yu-De; Yeh, Ping-Cheng; Wang, C.-Y.; Yang, Hsin-Yun; Tzeng, Pei-Jer; Liao, M.-H.; Chang, Shuo‐Hung; Tseng, Y.-Y.; Lee, M. H.

doi:10.1109/irps45951.2020.9129088

Cited by 2 publications

(1 citation statement)

References 12 publications

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“…Figure 1(c) shows the schematic diagram of multi-domain for 2D device modeling within a grain of 5 nm thick polycrystalline HZO. The model for the domain polarization orientation is defined, as shown in figure 2 [17]. It is projected in a direction normal to the channel and the electrode, and a Gaussian distribution is applied.…”

Section: Multi-domain Model Of Polycrystalline Hzomentioning

confidence: 99%

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

Chen¹,

Liao²,

Hsiang³

et al. 2020

Semicond. Sci. Technol.

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Device dimension scaling down to be comparable to the domain size of polycrystalline ferroelectric HfZrO2 (HZO) is evaluated for subthreshold swing (SS) and drain-induced barrier lowering (DIBL) by numerical simulation. The proposed multi-domain modeling involves polarization random location in HZO and probability with Gaussian distribution, as well as being integrated with the Landau–Khalatnikov equation. A small device with a few domains exhibits steep SS compared with large dimension with many domains. The N-DIBL (negative-DIBL) is also estimated by using this model, and the negative capacitance effect retards the short-channel effects significantly. The trend of the experimental data and simulation results of fin field-effect transistors and planar field-effect transistors is consistent with nano-scale and micro-scale devices, respectively.

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Section: Multi-domain Model Of Polycrystalline Hzomentioning

confidence: 99%

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

Chen¹,

Liao²,

Hsiang³

et al. 2020

Semicond. Sci. Technol.

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show abstract

Promising Engineering Approaches for Improving the Reliability of HfZrO_x 2-D and 3-D Ferroelectric Random Access Memories

Lin

Yeh

Tzeng

et al. 2020

IEEE Trans. Electron Devices

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Double Layers Omega FETs with Ferroelectric HfZrO₂ for One-Transistor Memory

Cited by 2 publications

References 12 publications

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

Promising Engineering Approaches for Improving the Reliability of HfZrO_x 2-D and 3-D Ferroelectric Random Access Memories

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Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

Cited by 2 publications

References 12 publications

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO2

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO2

Promising Engineering Approaches for Improving the Reliability of HfZrO x 2-D and 3-D Ferroelectric Random Access Memories

Contact Info

Product

Resources

About

Double Layers Omega FETs with Ferroelectric HfZrO₂ for One-Transistor Memory

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

Promising Engineering Approaches for Improving the Reliability of HfZrO_x 2-D and 3-D Ferroelectric Random Access Memories