Double-pulse laser induced breakdown spectroscopy with ambient gas in the vacuum ultraviolet: Optimization of parameters for detection of carbon and sulfur in steel

Hayden, P.; Costello, J. T.; Kennedy, E. T.

doi:10.1016/j.sab.2014.07.002

Cited by 30 publications

(29 citation statements)

References 42 publications

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“…On the other hand, the larger pressures favor the emission of the lower charge states (Ga III and Ga II) in region III. Increased emission with increasing background gas has been observed by other authors in also in the VUV region and the X-ray region [24,25]. In the range of interest of this work, we observe both decrease and increase of line intensity according to the different charge states.…”

Section: Discussionsupporting

confidence: 83%

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Vacuum ultraviolet spectral emission properties of Ga, In and Sn droplet-based laser produced plasmas

Gambino

Rollinger

Brandstätter

et al. 2016

Spectrochimica Acta Part B: Atomic Spectroscopy

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The Emission Spectra of gallium, indium and tin droplet-based laser produced plasmas are presented in the Vacuum Ultraviolet (VUV) emission range from 30 nm to 160 nm. The Ga ion transitions are investigated in detail as a function of background pressure level and laser irradiance. Different wavelength emission regions were detected according to the level of background gas. At short wavelengths (i.e. 30-50 nm) the line emission from the higher charge states is reduced with increasing pressure, while at longer wavelengths (i.e. 100-160 nm) the trend is inverted, as the plasma emission intensity of the lower charge states increases with higher background gas level. The emitted lines are fitted with Voigt profiles to determine the electron density. The electron temperature is obtained from a fit based on the Planck distribution. These estimations are then used to identify the relevant processes that lead to the different charge state emissions as a function of background gas. Langmuir Probe measurements are also reported for evaluating the ion kinetic energy as a function of background gas pressure level. The Ga spectra are calibrated in units of spectral radiance, together with spectra from indium and tin. This calibration allows absolute power estimations from the light source in the VUV region. The presented experimental results are relevant as fundamental plasma emission spectroscopic measurements in an almost unexplored wavelength region as well as for applications such as Extreme Ultraviolet Lithography to determine the so-called Out-Of-Band (OOB) radiation emission and for metrology applications for future inspection tools.

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Section: Discussionsupporting

confidence: 83%

“…2 where M is the Sn, Ga or In ion mass and v is the ion velocity measured from the TOF signals [24]. These measurements were carried out for different N2 background gas levels (i.e.…”

Section: Discussionmentioning

confidence: 99%

Vacuum ultraviolet spectral emission properties of Ga, In and Sn droplet-based laser produced plasmas

Gambino

Rollinger

Brandstätter

et al. 2016

Spectrochimica Acta Part B: Atomic Spectroscopy

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“…16 Photoabsorption processes are also observed in this wavelength region with the use, for example, of the dual pulsed laser technique. 17 Emission in this wavelength region occurs for planar targets within a few mm from the target. 17 In this case, the plasma can be optically considered thin.…”

Section: Theoretical Considerationsmentioning

confidence: 99%

“…17 Emission in this wavelength region occurs for planar targets within a few mm from the target. 17 In this case, the plasma can be optically considered thin. Assuming a collisional-radiative equilibrium, the ion fractions (i.e., the ionic chain, which relates the fraction of the next ion stage z þ 1 to the observed one z in the stationary case) as function of the electron temperature T e can be predicted by the Saha equation, once the ionization potential is known, with 18,19 n zþ1 n z ¼ Sðz; T e Þ α r ðz þ 1; T e Þ þ n e α 3b ðz þ 1; T e Þ ;…”

Section: Theoretical Considerationsmentioning

confidence: 99%

Spectral emission properties of a laser-produced plasma light source in the sub-200 nm range for wafer inspection applications

Gambino

Rollinger

Hudgins

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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The spectral emission properties of a droplet-based laser-produced plasma are investigated in the vacuum ultraviolet (VUV) range. Measurements are performed with a spectrograph that operates from 30 to 180 nm with a spectral resolution of 0.1 nm. The emission spectra are recorded for different metal droplet targets, namely tin, indium, and gallium. Measurements were performed at different pressure levels of the background gas. Several characteristic emission lines are observed. The spectra are also calibrated in intensity in terms of spectral radiance to allow absolute emission power estimations from the light source in the VUV region. The presented experimental results are relevant for alternative light sources that would be needed for future wafer inspection tools. In addition, the experimental results help to determine the out-of-band radiation emission of a tin-based extreme ultraviolet (EUV) source. By tuning the type of fuel, the laser energies, and the background gas, the laser-produced plasma light source shows good capabilities to be operated as a light source that covers a spectral emission range from the EUV to the sub-200 nm range.

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“…LIBS can be used to analyze any state of matter (solid, liquid or gas). Almost all elements can be detected by LIBS because of thy emit light when excited to sufficiently high energies, depends only on the laser power as well as on the detector sensitivity of the dispersed radiation and wavelength range of the spectrometer [3]. Atomic emission spectroscopy is a well-established technique for the measurement of materials.…”

Section: Introductionmentioning

confidence: 99%

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2017

Journal of Materials Sciences and Applications

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Background: The spectroscopy study of atomic emission from the expanding plasma plume formed during the laser-matter interaction what is called Laser Induced Breakdown Spectroscopy (LIBS). It provides valuable information about the composition of the target material. In this study, The plasma produced by the interaction of high fluence Nd: YAG laser at the wavelength of 1064 nm with Silicon-Aluminum target (Si:Al). Studied the laser-induced plasma generated at different laser energies has been characterized using optical emission spectroscopy. High power pulse laser is used to generate plasma from (Si:Al) target. The electron temperatures (T e ) and plasma density (n e ) were calculated by Boltzmann plot method from singly ionized aluminum emission lines (Al II), and Saha equation, respectively. T e and n e utilized to evaluate the plasma parameters such as Debye length (λ D ), number of particles in Debye sphere (N D ) and plasma frequency (ω p ).

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Double-pulse laser induced breakdown spectroscopy with ambient gas in the vacuum ultraviolet: Optimization of parameters for detection of carbon and sulfur in steel

Cited by 30 publications

References 42 publications

Vacuum ultraviolet spectral emission properties of Ga, In and Sn droplet-based laser produced plasmas

Vacuum ultraviolet spectral emission properties of Ga, In and Sn droplet-based laser produced plasmas

Spectral emission properties of a laser-produced plasma light source in the sub-200 nm range for wafer inspection applications

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