Vacuum ultraviolet spectral emission properties of Ga, In and Sn droplet-based laser produced plasmas

Gambino, N.; Rollinger, Bob; Brandstätter, Markus; Abhari, Reza S.

doi:10.1016/j.sab.2016.06.007

Cited by 7 publications

(6 citation statements)

References 20 publications

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“…6 An intensely hot plasma with a temperature of several tens of eV is generated; it efficiently emits EUV radiation at the primary resonances of multiply ionized Sn around 13.5 nm, 7 plus secondary peaks in the VUV and UV, and broadband blackbody radiation in accordance with Wien's classical law. 8,9 However, this spectrum is filtered by the series of narrowband Bragg-reflection mirrors in the scanner, so the photon spectrum inside the scanner at the reticle and wafer level may be assumed to be 13.5 nm (AE1.5%), 10 as shown in Fig. 2.…”

Section: Euv Generationmentioning

confidence: 99%

EUV-induced hydrogen plasma: pulsed mode operation and confinement in scanner

Kerkhof

Yakunin

Astakhov

et al. 2021

J. Micro/Nanopattern. Mats. Metro.

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In recent years, EUV lithography scanner systems have entered high-volume manufacturing for state-of-the-art integrated circuits, with critical dimensions down to 10 nm. This technology uses 13.5-nm EUV radiation, which is shaped and transmitted through a near-vacuum H 2 background gas. This gas is excited into a low-density H 2 plasma by the EUV radiation, as generated in pulsed mode operation by the laser-produced plasma in the EUV source. Thus, in the confinement created by the walls and mirrors within the scanner system, a reductive plasma environment is created that must be understood in detail to maximize mirror transmission over the lifetime and to minimize molecular and particle contamination in the scanner. In addition to the irradiated mirrors, reticle, and wafer, the plasma and radical load to the surrounding construction materials also must be considered. We provide an overview of the EUV-induced plasma in the scanner context. Special attention is given to the plasma parameters in a confined geometry, such as that found in the scanner area near the reticle. It is shown that plasma confinement and resulting contributions from secondary electron emission delay the formation of the plasma sheath and thereby reduce the peak ion energies to below the sputtering threshold for mirrors and construction materials. Furthermore, for a confined pulsed plasma with a pulse period shorter than the decay time of the plasma, the plasma consists of a quasi-steady-state cold background plasma and periodic transient peaks in ion energy and ion flux. In terms of modeling, this means that no assumptions can be made on the electron distribution functions and a (Monte-Carlo) particle-in-cell (PIC) model is needed. We present an extension of the PIC model approach to complex three-dimensional geometries and to multiple pulses using a hybrid PIC-diffusion approach. Also, the translation of these specific plasma parameters to off-line setups and the aspects that must be included to make a meaningful translation from off-line laboratory EUV setups to the scanner plasma are discussed. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Euv Generationmentioning

confidence: 99%

EUV-induced hydrogen plasma: pulsed mode operation and confinement in scanner

Kerkhof

Yakunin

Astakhov

et al. 2021

J. Micro/Nanopattern. Mats. Metro.

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“…Extreme ultraviolet (EUV) emissions from highly charged ions play an important role in the study of a wide variety of astrophysical and laboratory plasmas [1][2][3][4][5][6][7][8][9], particularly for laser-produced plasmas, fusion devices and electron beam ion traps (EBITs). The lines observed in the EUV spectra unveil information about plasma characteristics, viz., electron temperature, ion density and chemical composition.…”

Section: Introductionmentioning

confidence: 99%

“…In the present work, we aim to carry out a theoretical study of electron impact excitation of highly charged Ge-like Te 20+ , Sb 19+ , Sn 18+ , In 17+ and Cd 16+ ions. EUV emissions from highly charged tin ions in laser-produced plasma are used in state-of-the-art nanolithography [4,6,7]. Cd ions are of huge interest in Tokamak fusion research [5] like several other fifth row elements of the periodic table.…”

Section: Introductionmentioning

confidence: 99%

Electron Impact Excitation of Ge-like Te20+–Cd16+ Ions

Malker

Sharma

2022

Atoms

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We study electron impact excitation of dipole allowed transitions in the extreme ultraviolet range—8–55 nm—for the germanium isoelectronic sequence Te20+–Cd16+. The fine structure transitions between the ground state having configuration 4s24p2 and the excited states with configurations 4s4p3 and 4s24p4d are considered for these ions. We employ the relativistic distorted wave method to calculate the excitation cross sections in the incident electron energy range from the excitation threshold to 5000 eV. To obtain the required ionic bound state wavefunctions we have used the multi-configuration Dirac-Fock method with correlations within the n = 5 complexes as well as performed relativistic configuration interaction calculations to include the quantum electrodynamic effects. The accuracy of these wavefunctions is established by comparing our calculated wavelengths and oscillator strengths of the considered transitions with the previously reported measurements and other available theoretical results. We also provide the fitting parameters of the calculated cross sections and the excitation rate coefficients for their direct applications in plasma modeling.

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“…Measurements of hydrogen gas stopping efficiency for tin ions from laser-produced plasma D. B. Abramenko, 1,2 M. V. Spiridonov, 3,2 P. V. Krainov, 4,1 V. M. Krivtsun, 1,2 D. I. Astakhov, 5,1 V. V. Medvedev, 1,4,a) M. van Kampen, 6 D. Smeets, 6 and K. N. Koshelev 1,2 1 Institute for Spectroscopy of the Russian Academy of Sciences, Fizicheskaya str. 5 Experimental studies of stopping of ion fluxes from laser-produced plasma by a low-pressure gas atmosphere are presented.…”

mentioning

confidence: 99%

“…1 This can be laserproduced plasma, discharge-produced plasma, or their combination-laser-assisted discharge-produced plasma. The range of applications of plasma-based radiation sources includes water-window microscopy, 2,3 photoelectron spectroscopy, 4 optical metrology, [5][6][7][8] and photolithography. 9,10 Photolithography in the EUV range or EUV lithography is the key driver of the plasma-based radiation source technologies nowadays.…”

mentioning

confidence: 99%

Measurements of hydrogen gas stopping efficiency for tin ions from laser-produced plasma

Abramenko

Spiridonov

Krainov

et al. 2018

Applied Physics Letters

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Vacuum ultraviolet spectral emission properties of Ga, In and Sn droplet-based laser produced plasmas

Cited by 7 publications

References 20 publications

EUV-induced hydrogen plasma: pulsed mode operation and confinement in scanner

EUV-induced hydrogen plasma: pulsed mode operation and confinement in scanner

Electron Impact Excitation of Ge-like Te20+–Cd16+ Ions

Measurements of hydrogen gas stopping efficiency for tin ions from laser-produced plasma

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