Double-side operable perovskite photodetector using Cu/Cu<sub>2</sub>O as a hole transport layer

Chen, You-Jyun; Li, Ming-Hsien; Liu, Jiayi; Chong, Cheong-Wei; Huang, Jehn-Yu; Chen, Peter

doi:10.1364/oe.27.024900

Cited by 9 publications

(5 citation statements)

References 62 publications

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“…Photodetectors (PDs) are attracting attention because they can be applied to various practical fields such as visual imaging, optical communication, scanners and precision medical devices [1][2][3][4][5]. Among the transparent conductive electrodes (TCEs) for various PDs, graphene (Gr) has demonstrated promise due to its extraordinarily high charge carrier mobility, excellent transmittance from ultraviolet to infrared and tunable work function by controlling the number of layers [6,7].…”

Section: Introductionmentioning

confidence: 99%

Highly stable semitransparent multilayer graphene/LaVO₃ vertical-heterostructure photodetectors

Lee¹,

Jung²,

Shin³

et al. 2022

Nanotechnology

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A heterostructure composed of combination of semi-metallic graphene (Gr) and high-absorption LaVO3 is ideal for high-performance translucent photodetector applications. Here, we present multilayer Gr/LaVO3 vertical-heterostructure semitransparent photodetectors (PDs) with various layer number (Ln). At Ln = 2, the PD shows the best performance of responsivity (R) 0.094 AW-1 and a specific detectivity (D*) of 7.385  107 cm Hz1/2W−1 at 532 nm. Additionally, the average visible transmittance of PD is 63%, that it is semitransparent. We increased R by approximately 13%, from 0.564 to 0.635 μA cm-2 by an Al reflector on the semitransparent PD. The R of unencapsulated PD maintains ~86 % (absolutely from 0.571 to 0.493 μA cm-2) of its initial R value after 2000 h at 25°C temperature/30% relative humidity, showing good stability. This behavior is superior to previously-reported graphene-based PDs. These results show that they have great potential for semitransparent optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Highly stable semitransparent multilayer graphene/LaVO₃ vertical-heterostructure photodetectors

Lee¹,

Jung²,

Shin³

et al. 2022

Nanotechnology

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“…This tremendous success is owed to the outstanding properties of lead halide perovskites including strong light absorption and long lifetimes of charge carriers exhibiting recombination rates as low as those of high-quality inorganic semiconductors . Because of these fascinating features, lead halide perovskites have been investigated also for applications to electro-optic devices, such as photodetectors, − light-emitting diodes, and lasers …”

Section: Introductionmentioning

confidence: 99%

Crystal Systems and Lattice Parameters of CH₃NH₃Pb(I_1–xBr_x)₃ Determined Using Single Crystals: Validity of Vegard’s Law

et al. 2020

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Metal halide perovskites are promising materials for light absorbers in solar cell applications. Use of the Br/I system enables us to control band gap energy and improves the efficiency of solar cells. Precise knowledge of lattice parameters and band gap energies as functions of compositions are crucially important for developing the devices using those materials. In this study, we have determined lattice parameters and band gap energies of CH3NH3Pb(I1–x Br x )3, one of the most intensively studied mix-halide perovskites, as functions of Br content x. We measured accurate Br contents and lattice parameters of CH3NH3Pb(I1–x Br x )3 (0 ≤ x ≤ 1) using single-crystalline samples by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) measurements, respectively. The CH3NH3Pb(I1–x Br x )3 crystal system is tetragonal for x ≤ 0.06 and cubic for x ≥ 0.08 at 300 K. Lattice parameters of CH3NH3Pb(I1–x Br x )3 strictly follow Vegard’s law; i.e., they are linearly dependent on x. We give linear expressions of x of lattice parameters for the tetragonal and cubic phases of CH3NH3Pb(I1–x Br x )3 at 300 K. We have shown that these expressions can be used for determining the Br contents of CH3NH3Pb(I1–x Br x )3 polycrystalline thin-film samples based on XRD measurements and, in addition, demonstrated that XPS measurements on polycrystalline samples may be erroneous because of impure ingredients in the samples. Furthermore, we determined band gap energies of CH3NH3Pb(I1–x Br x )3 (0 ≤ x ≤ 1) at room temperature using absorption spectra of polycrystalline thin films taking account of excitonic effects.

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“…The spectral responsivity is a figure of merit representing the sensitivity of a PD to photon irradiation, which can be defined as [13,14],…”

Section: Responsivitymentioning

confidence: 99%

Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg2Si/Si Heterojunction Photodetector

Gao

Zou

et al. 2021

Photonics

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To develop and design an environmentally friendly, low-cost shortwave infrared (SWIR) photodetector (PD) material and extend the optical response cutoff wavelengths of existing silicon photodetectors beyond 1100 nm, high-performance silicon-compatible Mg2Si/Si PDs are required. First, the structural model of the Mg2Si/Si heterojunction was established using the Silvaco Atlas module. Second, the effects of the doping concentrations of Mg2Si and Si on the photoelectric properties of the Mg2Si/Si heterojunction PD, including the energy band, breakdown voltage, dark current, forward conduction voltage, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on/off ratio, response time, and recovery time, were simulated. At different doping concentrations, the heterojunction energy band shifted, and a peak barrier appeared at the conduction band of the Mg2Si/Si heterojunction interface. When the doping concentrations of Si and Mg2Si layer were 1017, and 1016 cm−3, respectively, the Mg2Si/Si heterojunction PD could obtain optimal photoelectric properties. Under these conditions, the maximum EQE was 70.68% at 800 nm, the maximum responsivity was 0.51 A/W at 1000 nm, the minimum NEP was 7.07 × 10−11 WHz–1/2 at 1000 nm, the maximum detectivity was 1.4 × 1010 Jones at 1000 nm, and the maximum on/off ratio was 141.45 at 1000 nm. The simulation and optimization result also showed that the Mg2Si/Si heterojunction PD could be used for visible and SWIR photodetection in the wavelength range from 400 to 1500 nm. The results also provide technical support for the future preparation of eco-friendly heterojunction photodetectors.

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Double-side operable perovskite photodetector using Cu/Cu₂O as a hole transport layer

Cited by 9 publications

References 62 publications

Highly stable semitransparent multilayer graphene/LaVO₃ vertical-heterostructure photodetectors

Highly stable semitransparent multilayer graphene/LaVO₃ vertical-heterostructure photodetectors

Crystal Systems and Lattice Parameters of CH₃NH₃Pb(I_1–xBr_x)₃ Determined Using Single Crystals: Validity of Vegard’s Law

Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg2Si/Si Heterojunction Photodetector

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Double-side operable perovskite photodetector using Cu/Cu2O as a hole transport layer

Cited by 9 publications

References 62 publications

Highly stable semitransparent multilayer graphene/LaVO3 vertical-heterostructure photodetectors

Highly stable semitransparent multilayer graphene/LaVO3 vertical-heterostructure photodetectors

Crystal Systems and Lattice Parameters of CH3NH3Pb(I1–xBrx)3 Determined Using Single Crystals: Validity of Vegard’s Law

Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg2Si/Si Heterojunction Photodetector

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Double-side operable perovskite photodetector using Cu/Cu₂O as a hole transport layer

Highly stable semitransparent multilayer graphene/LaVO₃ vertical-heterostructure photodetectors

Highly stable semitransparent multilayer graphene/LaVO₃ vertical-heterostructure photodetectors

Crystal Systems and Lattice Parameters of CH₃NH₃Pb(I_1–xBr_x)₃ Determined Using Single Crystals: Validity of Vegard’s Law