Double strain state in a single GaN/AlN nanowire: Probing the core-shell effect by ultraviolet resonant Raman scattering

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

“…31 The formation of a lateral AlGaN shell with a progressively increasing thickness is attributed to the short diffusion length of the Al adatoms under the growth conditions, 67,68 and thus, AlGaN can nucleate at the top and on the facets of the nanowires, which can in situ passivate the surface states on the sidewalls of the nanowires and provide carrier confinement. 69,70 The formation of an asymmetric shell, as shown in Fig. 4(c), is likely due to the short diffusion lengths of the Ga and Al adatoms and a shadow effect when the nanowire density is too high.…”

Optical phonon modes of wurtzite InP

“…InP NWs also present ZB or WZ phase depending on the growth conditions and, in some cases, both phases coexist The WZ phonon modes for III-V compounds have been recently investigated in InN, GaN, InAs, GaAs, and InP by Raman scattering. [13][14][15][16][17] However, as for InP, a detailed investigation of the Raman modes in WZ InP NWs has not been reported so far. Surprisingly, the results reported by Refs.…”

The influence of electric field on the interface polaron properties in a wurtzite nitride nanowire

“…Among the numerous studies of physical properties in nitride quantum structures with lowdimensionalities, the quasi-one dimensional (Q1D) nitride nanowires have attracted special interest [5][6][7][8][9][10][11][12]. This is mainly because the confinement of carriers in two directions and freedom in the third direction in NWs promise more efficient lasers and optical gain as well as possible applications for optical waveguide and photovoltaic cells in comparison with quantum wells and quantum dots.…”