Down stream oxidation of silicon using an ECR microwave plasma disk reactor

Salbert,; Reinhard,; Asmussen,

doi:10.1109/plasma.1989.166268

IEEE International Conference on Plasma Science

DOI: 10.1109/plasma.1989.166268

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Down stream oxidation of silicon using an ECR microwave plasma disk reactor

Salbert Salbert

Reinhard Reinhard

Asmussen Asmussen

Abstract: Laser light scattering may be used as an powerful in-siiu probe of particulate contamination. Using this technique, it is showvn that certain silicon etching plasmas can produce significant amounts of particulatc contamination. In addition, using spatially-resulvcd mcasunments it is

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“…While this model accounts for the linear oxidation rate for admixtures of argon at 0 13. Pa, it does not accurately predict the linear rate coefficients for other surface conditions.…”

mentioning

confidence: 96%

Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

Carl

Hess

Lieberman

et al. 1991

Journal of Applied Physics

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Thin (3-300 nm) oxides were grown on single crystal silicon substrates at temperatures from 523 K to 673 K in a low pressure electron cyclotron resonance oxygen plasma. Oxides were grown under floating, anodic or cathodic bias conditions, although only the oxides grown under floating or anodic bias conditions are acceptable for use as gate dielectrics in metal-oxide-semiconductor (MOS) technology. Oxide thickness uniformity as measured by ellipsometry decreased with increasing oxidation time for all bias conditions. Oxidation kinetics under anodic conditions can be explained by negatively charged atomic oxygen, O", transport limited growth. Constant current anodizations yielded three regions ofgrowth: 1) a concentration gradient dominated regime for oxides thinner than 10 nm; 2) a field dominated regime with ohmic charged oxidant transport for oxide thickness inthe range of10 nm to approximately 100 nm; and 3)a space-charge limited regime for films thicker than approximately 100 nm. The relationship between oxide thickness (x^), overall potential drop (Vâ nd ion current (jj) in the space-charge limited transport region was of the form: yx a V^/ x^.

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“…While this model accounts for the linear oxidation rate for admixtures of argon at 0 13. Pa, it does not accurately predict the linear rate coefficients for other surface conditions.…”

mentioning

confidence: 96%

Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

Carl

Hess

Lieberman

et al. 1991

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

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Down stream oxidation of silicon using an ECR microwave plasma disk reactor

Abstract: Laser light scattering may be used as an powerful in-siiu probe of particulate contamination. Using this technique, it is showvn that certain silicon etching plasmas can produce significant amounts of particulatc contamination. In addition, using spatially-resulvcd mcasunments it is

Cited by 1 publication

References 2 publications

Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

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