Abstract:Tunnel Field Effect Transistor can be introduced as an emerging alternate to MOSFET which is energy efficient and can be used in low power applications. Due to the challenge involved in integration of band to band tunneling generation rate, the existing drain current models are inaccurate. A compact analytical model for simple tunnel FET and pnpn tunnel FET is proposed which is highly accurate. The numerical integration of tunneling generation rate in the tunneling region is performed using Simpson’s rule. Int… Show more
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