Drain–Source Voltage Clamp Circuit for Online Accurate ON-State Resistance Measurement of SiC MOSFETs in DC Solid-State Power Controller

Bin, Yu; Wang, Li; Ahmed, Daniyal

doi:10.1109/jestpe.2019.2954038

Cited by 19 publications

(6 citation statements)

References 28 publications

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“…Conventional OVMCs can be categorized into two: the one is to use diode clamp circuits [18]- [26], and the other is to utilize MOSFET clamp circuits [9]- [11], [16]- [17]. The diode clamp circuits are again divided into two groups: the one using single diode [18]- [20], and the other using two series-connected diodes [21]- [26]. This categorization is based on the number of forward-biased diodes excluding Zener diodes when the power semiconductor device is ON.…”

Section: Limitation Of Conventional On-state Resistance Measurement M...mentioning

confidence: 99%

Noise-Robust Online Measurement of the On-State Resistance of the Power Semiconductor Devices in PWM Converters

Shin,

Kim

2024

IEEE Access

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The on-state resistance of power semiconductor devices, RDUT, is used to estimate the remaining useful life (RUL) of the devices. Conventional online measurement of RDUT involves on-state voltage measurement of the on-state device, which is easily polluted by switching noise to limit the measurement accuracy. This paper proposes a new noise-robust method to measure the increment of RDUT by inductor current and input/output DC voltage of DC-DC converters. The proposed method features higher accuracy in predicting RUL than the conventional one because the inductor current is immune to switching noise. Experimental results showed 99.2% maximum accuracy between the actual and measured RDUT of sample MOSFETs.INDEX TERMS On-state resistance, remaining useful life (RUL), online monitoring, power semiconductor devices.

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Section: Limitation Of Conventional On-state Resistance Measurement M...mentioning

confidence: 99%

Noise-Robust Online Measurement of the On-State Resistance of the Power Semiconductor Devices in PWM Converters

Shin,

Kim

2024

IEEE Access

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“…Therefore, a 100 A SSPC is designed with a single CAS325M12HM2 device and will be later compared with the SSPC developed with five C2M0025120D devices in parallel. The positive thermal coefficient of SiC MOSFET devices ensures that parallel-connected devices are free of the thermal runaway [18]. On the other side, those five devices are placed on one heatsink allowing the heat sharing, which tends to force devices balancing the temperature as a hot device heats its neighbours.…”

Section: Specification and Design Consideration Of The DC Sspcmentioning

confidence: 99%

Development of High-Current Solid-State Power Controllers for Aircraft High-Voltage DC Network Applications

et al. 2021

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Solid-state power controllers (SSPCs) have been received increasing attention as they can configure the electrical system and protect the system by fast tripping mechanism at the same time. Although the high-voltage direct current (HVDC) electrical system can bring sustainable savings on the cables' weight and losses, the protection can be considerably challenging. SSPCs have been successfully utilized for 28V DC aircraft onboard network. However, high-voltage ones are impeded by the vast over-voltage and the excessive losses generated from SSPC switching. This paper tries to fill this gap and presents the development of high-power SSPCs for a ±270VDC network of a future turboprop aircraft. Comprehensive designs of proper over-voltage suppression along with SSPC thermal management are presented in this paper. Besides, a comparative study on the SSPC device is carried out. Two prototypes, including a single MOSFET module and paralleling several discrete MOSFET devices, are built and then tested in the experiment. It has been validated that the proposed voltage clamping design can not only effectively suppress the over-voltage, but also limit the SSPC temperature increase during switching for both candidates. After comparing the conduction losses, maximum junction temperature, power density, weight and volume, the single device solution is recommended as a preferable SSPC option for future aircraft.INDEX TERMS More-electric Aircraft, solid state power controller, thermal analysis, voltage clamping.

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“…However, due to the difference in the physical positions and forward current of the two diodes, it is difficult to ensure that the voltage drop of the two diodes is equal, which may lead to inaccurate results. Yu et al [ 24 ] presented an innovative design for the DVCC with improved real-time measurement accuracy. Guacci et al described a DVCC in [ 25 ], which can accurately correct the voltage offset caused by the diode voltage drop and has a higher measurement accuracy.…”

Section: Introductionmentioning

confidence: 99%

“…Guacci et al described a DVCC in [ 25 ], which can accurately correct the voltage offset caused by the diode voltage drop and has a higher measurement accuracy. Both of these circuits in [ 24 , 25 ] introduce operational amplifiers, which increases the complexity of the course. A DVCC integrated with a half-bridge circuit was employed in [ 26 ] for device evaluation in the hard-switching test and the soft-switching conditions.…”

Section: Introductionmentioning

confidence: 99%

An Improved Voltage Clamp Circuit Suitable for Accurate Measurement of the Conduction Loss of Power Electronic Devices

Zhao

Sun

et al. 2021

Sensors

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Power electronic devices are essential components of high-capacity industrial converters. Accurate assessment of their power loss, including switching loss and conduction loss, is essential to improving electrothermal stability. To accurately calculate the conduction loss, a drain–source voltage clamp circuit is required to measure the on-state voltage. In this paper, the conventional drain–source voltage clamp circuit based on a transistor is comprehensively investigated by theoretical analysis, simulations, and experiments. It is demonstrated that the anti-parallel diodes and the gate-shunt capacitance of the conventional drain–source voltage clamp circuit have adverse impacts on the accuracy and security of the conduction loss measurement. Based on the above analysis, an improved drain–source voltage clamp circuit, derived from the conventional drain–source voltage clamp circuit, is proposed to solve the above problems. The operational advantages, physical structure, and design guidelines of the improved circuit are fully presented. In addition, to evaluate the influence of component parameters on circuit performance, this article comprehensively extracts three electrical quantities as judgment indicators. Based on the working mechanism of the improved circuit and the indicators mentioned above, general mathematical analysis and derivation are carried out to give guidelines for component selection. Finally, extensive experiments and detailed analyses are presented to validate the effectiveness of the proposed drain–source voltage clamp circuit. Compared with the conventional drain–source voltage clamp circuit, the improved drain–source voltage clamp circuit has higher measurement accuracy and working security when measuring conduction loss, and the proposed component selection method is verified to be reasonable and effective for better utilizing the clamp circuit.

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Drain–Source Voltage Clamp Circuit for Online Accurate ON-State Resistance Measurement of SiC MOSFETs in DC Solid-State Power Controller

Cited by 19 publications

References 28 publications

Noise-Robust Online Measurement of the On-State Resistance of the Power Semiconductor Devices in PWM Converters

Noise-Robust Online Measurement of the On-State Resistance of the Power Semiconductor Devices in PWM Converters

Development of High-Current Solid-State Power Controllers for Aircraft High-Voltage DC Network Applications

An Improved Voltage Clamp Circuit Suitable for Accurate Measurement of the Conduction Loss of Power Electronic Devices

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