2011
DOI: 10.1063/1.3603962
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Dramatic enhancement of thermoelectric power factor in PbTe:Cr co-doped with iodine

Abstract: We report thermoelectric properties of PbTe doubly doped with chromium (Cr) and iodine (I). Cr is found to create a local enhancement of density of states (DOS) in the conduction band of PbTe, and I is found to tune the position of the Fermi level. The coincidence of the Fermi level with the enhanced DOS is found to produce up to 135% enhancement in thermopower leading to a high power factor (PF) of 56.16 × 10−4 Wm−1K−2 at 500 K. Such high value of power factor can produce thermoelectric figure of merit (ZT) a… Show more

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Cited by 61 publications
(27 citation statements)
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“…Numerous strategies to enhance TE performance are reported, including nanostructuring, band engineering, resonant states, convergence of electronic bands, energy filtering (EF), formation of nanocomposite materials, synergistic approach of high‐mobility electron injection, phonon glass electron crystal, scattering from nanoscale endotaxial precipitation and mesoscale grain boundaries (GBs), and quantum confinement 8,12e,13. Most of the aforementioned approaches were mostly found to be efficient in suppressing phonon transport.…”
Section: Introductionmentioning
confidence: 99%
“…Numerous strategies to enhance TE performance are reported, including nanostructuring, band engineering, resonant states, convergence of electronic bands, energy filtering (EF), formation of nanocomposite materials, synergistic approach of high‐mobility electron injection, phonon glass electron crystal, scattering from nanoscale endotaxial precipitation and mesoscale grain boundaries (GBs), and quantum confinement 8,12e,13. Most of the aforementioned approaches were mostly found to be efficient in suppressing phonon transport.…”
Section: Introductionmentioning
confidence: 99%
“…This could be partly achieved in rare-earth compounds like YbAl3, yielding very large PF at low temperatures [17]. However, those are metals with TE properties rapidly decreasing with increasing T. Alternatively, attempts to combine these apparently incompatible requirements in semiconductors have relied on the "band structure engineer ing" of narrow energy features in the density of states from in-gap and resonant states near the band edges [18][19][20][21][22].Here, we show theoretically that the seemingly conflict ing requirements formulated by Mahan and Sofo [16] can actually be combined within the same band of certain semiconductors, exploiting the highly directional character of some orbitals. This is achieved without any nanostructur ing or introduction of resonant states.…”
mentioning
confidence: 99%
“…Other materials include magnesium silicide Mg 2 Si, germanium magnesium Mg 2 Ge, and magnesium stannate Mg 2 Sn [11,12] with the ZT coefficient at a level of 0.8. In addition, materials based on lead telluride doped with lanthanum and chromium [13] are currently enjoying a growing interest. Their ZT coefficient is 2.2 in 550 K and 1.8 in 850 K.…”
Section: Thermoelectrics -Properites and Materialsmentioning
confidence: 99%