Dramatically enhanced polarization in (001), (101), and (111) BiFeO3 thin films due to epitiaxial-induced transitions

Li, Jiefang; Wang, J. L.; Wuttig, Manfred; Ramesh, R.; Wang, Naigang; Ruette, B.; Pyatakov, A. P.; Zvezdin, A. K.; Viehland, Dwight

doi:10.1063/1.1764944

Cited by 578 publications

(380 citation statements)

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“…8 Recently, large ferroelectric polarizations, exceeding those of prototypical ferroelectrics BaTiO 3 and PbTiO 3 , have been reported in high-quality thin films of BiFeO 3 . [8][9][10] These sizable polarizations are consistent with the observed large atomic distortions, 11,12 but apparently inconsistent with earlier studies of bulk BiFeO 3 , 13 a difference whose origin is currently under debate. In addition, appreciable magnetizations ͑ϳ1 B per formula unit͒, increasing with decreasing film thickness, have been reported, 8 accompanied by substantial magnetoelectric coupling.…”

Section: Introductionsupporting

confidence: 76%

“…The first thin film measurements 8 yielded values of 50-90 C/cm 2 on ͑100͒ aligned substrates, increasing to 100 C/cm 2 for ͑111͒ orientations. 9 Following that, a whole variety of different experimental values has been reported 10,17,18 ͑summarized in Table I͒, including a very recent report 10 of giant ͑Ͼ150 C/cm 2 ͒ polarization, which is the highest value ever measured for a ferroelectric.…”

Section: Introductionmentioning

confidence: 99%

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First-principles study of spontaneous polarization in multiferroicBiFeO3

et al. 2005

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The ground-state structural and electronic properties of ferroelectric BiFeO 3 are calculated using density functional theory within the local spin-density approximation ͑LSDA͒ and the LSDA+ U method. The crystal structure is computed to be rhombohedral with space group R3c, and the electronic structure is found to be insulating and antiferromagnetic, both in excellent agreement with available experiments. A large ferroelectric polarization of 90-100 C/cm 2 is predicted, consistent with the large atomic displacements in the ferroelectric phase and with recent experimental reports, but differing by an order of magnitude from early experiments. One possible explanation is that the latter may have suffered from large leakage currents. However, both past and contemporary measurements are shown to be consistent with the modern theory of polarization, suggesting that the range of reported polarizations may instead correspond to distinct switching paths in structural space. Modern measurements on well-characterized bulk samples are required to confirm this interpretation.

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Section: Introductionsupporting

confidence: 76%

Section: Introductionmentioning

confidence: 99%

First-principles study of spontaneous polarization in multiferroicBiFeO3

et al. 2005

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“…[1][2][3] Large remnant polarizations P r (above 60 μC/cm 2 ) have been reported for BFO films fabricated by various deposition methods. [4][5][6][7][8] Hence, BFO is expected to be a promising Pb-free ferroelectric material for realizing environment-friendly and highly-integrated ferroelectric random access memories (FeRAMs). 9,10) On the other hand, as serious problems for the industrial application of FeRAMs using BFO films, there are large leakage currents and large coercive fields E c (generally, 300-400 kV/cm) [4][5][6][7][8] .…”

Section: Introductionmentioning

confidence: 99%

Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO₃Ferroelectric Thin Films

Ukai

Yamazaki

Kawae

et al. 2012

Jpn. J. Appl. Phys.

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“…1 In addition, such ferroelectric oxide films as SrBi 2 Nb 2 O 9 and BiFeO 3 , which would not be polar-axis oriented on (001)-oriented substrates, have exhibited enhanced spontaneous electric polarizations when they are grown on (111)-oriented substrates. 2,3 Not only as a ferromagnetic functional component in (111)-oriented functional heteroepitaxial devices, but an electrode in (111)-oriented ferroelectric capacitors, free from fatigue and imprinting behaviors, SrRuO 3 (SRO) thin films would be one of promising candidates to be integrated into such (111)-oriented structures, as have been favorably integrated into (001)-oriented heterostructures. 4,5 The key to realizing (111)-oriented oxide heterosturctures is the control of sharp heterointerfaces on the atomic level, and thus the control of a favorable growth mode, the so-called layer-by-layer growth mode is prerequisite.…”

Section: A)mentioning

confidence: 99%

Layer-by-layer growth and growth-mode transition of SrRuO3 thin films on atomically flat single-terminated SrTiO3 (111) surfaces

Chang

Park

Lee

et al. 2009

Journal of Crystal Growth

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We report on growth-mode transitions in the growth of SrRuO 3 thin films on atomically flat Ti 4+ single-terminated SrTiO 3 (111) substrates, investigated by reflection high-energy electron diffraction and atomic force microscopy. Over the first ~9 unit cells, the dominant growth mode changes from island to layer-by-layer for the growth rate of 0.074 unit cells/sec and the growth temperature of 700 ºC. Moreover, in the course of growing SrRuO 3 films, the governing growth mode of interest can be manipulated by changing the growth temperature and the growth rate, which change allows for the selection of the desired layer-by-layer mode. The present study thus paves the way for integrations of SrRuO 3 thin layers into (111)-orientated oxide heterostructures, and hence multi-functional devices, requiring control of the sharp atomic-level interfaces and the layer-by-layer growth mode. a)Author to whom all correspondence should be addressed. E-mail: sangkoog@snu.ac.kr 1 Controlling the crystallographic orientation of thin films by altering that of a substrate on which the films are grown has been one of the pursuits for fabrications of oxide heterostructures of new and better physical properties. For instance, a manipulation of a nearest neighbor atomic ordering through an alternate stacking of one unit-cell layers in two perovskite oxides on (111)-oriented substrates has been theoretically predicted to lead to a different magnetic ordered state, which would not be observed from bulk materials. 1 In addition, such ferroelectric oxide films as SrBi 2 Nb 2 O 9 and BiFeO 3 , which would not be polar-axis oriented on (001)-oriented substrates, have exhibited enhanced spontaneous electric polarizations when they are grown on (111)-oriented substrates. 2,3 Not only as a ferromagnetic functional component in (111)-oriented functional heteroepitaxial devices, but an electrode in (111)-oriented ferroelectric capacitors, free from fatigue and imprinting behaviors, SrRuO 3 (SRO) thin films would be one of promising candidates to be integrated into such (111)-oriented structures, as have been favorably integrated into (001)-oriented heterostructures. 4,5 The key to realizing (111)-oriented oxide heterosturctures is the control of sharp heterointerfaces on the atomic level, and thus the control of a favorable growth mode, the so-called layer-by-layer growth mode is prerequisite. Despite such a strong need for (111)-oriented oxide heterostructures, realizing the layer-by-layer growth of SRO films on SrTiO 3 (STO) (111) has yet to be reported because an atomically well-defined, single-2 terminated STO (111) surface has proved difficult to achieve. A recent accomplishment of successful fabrications of such a STO (111) surface by Chang et al.,6 however, has opened the door to the layer-by-layer growth of SRO thin films, enabling SRO thin films to be integrated into (111)-oriented oxide heterostructures.In this letter, we report on anomalous growth-mode transitions at the initial growth of SRO thin films on single-terminated ST...

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Dramatically enhanced polarization in (001), (101), and (111) BiFeO3 thin films due to epitiaxial-induced transitions

Cited by 578 publications

References 12 publications

First-principles study of spontaneous polarization in multiferroicBiFeO3

First-principles study of spontaneous polarization in multiferroicBiFeO3

Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO₃Ferroelectric Thin Films

Layer-by-layer growth and growth-mode transition of SrRuO3 thin films on atomically flat single-terminated SrTiO3 (111) surfaces

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Dramatically enhanced polarization in (001), (101), and (111) BiFeO3 thin films due to epitiaxial-induced transitions

Cited by 578 publications

References 12 publications

First-principles study of spontaneous polarization in multiferroicBiFeO3

First-principles study of spontaneous polarization in multiferroicBiFeO3

Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO3Ferroelectric Thin Films

Layer-by-layer growth and growth-mode transition of SrRuO3 thin films on atomically flat single-terminated SrTiO3 (111) surfaces

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Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO₃Ferroelectric Thin Films