Drift region optimization in high‐voltage GaN MOS‐gated HEMTs

Li, Zhongda; Chow, T. P.

doi:10.1002/pssc.201001173

Cited by 10 publications

(4 citation statements)

References 10 publications

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“…The ability to modify the 2DEG density during device processing can enable useful technologies, such as multiple zone RESURF design, to be employed in GaN HEMTs or MOSC-HEMTs, which has been projected to be able to enhance the breakdown voltage. 4) Besides the method of reducing 2DEG density by etching of the AlGaN layer, Song et al have demonstrated that CF 4 plasma treatment can be used to reduce the 2DEG by incorporating fluorine atoms in the AlGaN. 5) In this paper we proposed and demonstrated a new method by etching of the GaN cap grown on top of the AlGaN layer.…”

Section: Introductionmentioning

confidence: 97%

A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

Li¹,

Chow²

2013

Jpn. J. Appl. Phys.

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We have experimentally demonstrated a new method for modifying the two-dimensional electron density (2DEG) at the AlGaN/GaN interface by etching of the GaN cap layer on top of the AlGaN. GaN MOS capacitors have been fabricated on samples with partially or fully etched GaN cap, and the 2DEG density has been extracted. The results show a linear relation between the 2DEG density and the thickness of the GaN cap being etched. We have also fabricated van der Pauw structures and obtained the 2DEG density using Hall measurements, and the results are consistent with that from the GaN MOS capacitors.

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Section: Introductionmentioning

confidence: 97%

A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

Li¹,

Chow²

2013

Jpn. J. Appl. Phys.

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“…This perfect charge balancing yields a uniform surface field in the HEMT drift region, which enhances the breakdown voltage of the HEMT. 14 Figure 5 shows the current and light output intensity vs voltage measured on a single 800 lm square GaN LED. The light output intensity was measured using a simple photodiode detector.…”

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confidence: 99%

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Waldron

Detchprohm

et al. 2013

Applied Physics Letters

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108

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We report the demonstration of monolithically integrated light-emitting diodes (LEDs) and power metal-oxide-semiconductor channel high-electron-mobility transistors (HEMTs) in GaN. The structure comprised a direct epitaxial integration of layers typical for a GaN-based LED grown directly on top of the layers of a GaN-based HEMT. The layers were then fabricated into a serially connected pair of GaN LED and metal-oxide-semiconductor-gated 0.3 lm-channel HEMT by exposing the LED/HEMT epitaxial layers in selective area etching. The resulting monolithically integrated circuit shows a full gate voltage modulation of the light output power. This demonstrates compatibility of group-III nitride LED and HEMT processes. V C 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4807125]GaN-based high-power light-emitting diodes (LEDs) used in lighting applications typically require dedicated electronic driver circuits for AC-DC power conversion, current sourcing, and dimming using pulse-width modulation (PWM) or analog current control methods. 1 GaN power switching field-effect transistors (FETs), such as metaloxide-semiconductor (MOS) FETs, high-electron-mobility transistors (HEMTs), and MOS-Channel HEMTs (MOSCHEMTs) have shown outstanding performance in terms of high breakdown voltage (BV), low specific on-resistance, and high operating frequency, 2-4 and can be very useful as output devices for emerging applications of high power-high voltage LED systems. Ultimately, monolithic integration of GaN-based LEDs and GaN power HEMTs can reduce the cost and the size of solid state lighting systems, improve system reliability, and serve as a technology platform for the development of light-emitting power integrated circuits (LEPICs). LEPICs can also play an important role in adding functionalities required for emerging solid state lighting applications such as visible light communication (VLC) and other LED control technologies required for future smart lighting applications. 5

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“…The main concern of the researchers is to improve the breakdown voltage (V BR ) by reshaping the electric field intensity distribution, and to increase the output current by reducing the on-resistance (R ON ) by implementing new structures or new technologies [3][4][5][6]. In addition, the V BR of the device is also affected by the quality of buffer layer [7], heterojunction [8] and barrier layer [9], etc. With the continuous maturity of GaN epitaxial growth technology, the influence of buffer layer on V BR becomes less important and the impact of current collapse caused by the surface defects of heterojunction and barrier layer becomes more significant.…”

Section: Introductionmentioning

confidence: 99%

Breakdown voltage enhancement and specific on-resistance reduction in depletion-mode GaN HEMTs by co-modulating electric field

Luo,

Wu,

Xing

et al. 2024

J. Phys. D: Appl. Phys.

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In this letter, a depletion-mode GaN high-electron mobility transistors (GaN HEMTs) with high breakdown voltage and low on-resistance are designed and experimentally demonstrated. It combines the gate field plate and partial u-GaN cap layer (Gate Field Plate and Partial u-GaN Cap HEMTs: GPU-HEMTs) to co-modulate the surface electric field distribution, which results in the electric field peak being far away from the gate edge, thus improving the breakdown voltage and decreasing the on-resistance. The optimized GPU-HEMTs exhibit a larger output current (I DS) of 495 mA/mm and a correspondingly smaller specific on-resistance of 4.26 mΩ·cm2. Meanwhile, a high breakdown voltage of 1044 V at I DS = 1 mA/mm compared to the conventional GaN HEMTs of 633 V was obtained. This approach is highly effective in simultaneously optimizing the breakdown voltage and the specific on-resistance of GaN HEMTs, while maintaining a large output current.

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Drift region optimization in high‐voltage GaN MOS‐gated HEMTs

Cited by 10 publications

References 10 publications

A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Breakdown voltage enhancement and specific on-resistance reduction in depletion-mode GaN HEMTs by co-modulating electric field

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