Driving-Dependent Damping of Rabi Oscillations in Two-Level Semiconductor Systems

Abstract

We propose a mechanism to explain the nature of the damping of Rabi oscillations with an increasing driving-pulse area in localized semiconductor systems and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and nonstationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.

Mechanism of entanglement preservation

“…It is also worth mentioning that a proposal aimed at simulating the spin-Boson model, which is relevant to the one considered in this paper, has been reported in a trapped ion system [24]. On the other hand many practical systems can now be engineered to show the novel non-Markovian effect [5,[25][26][27][28]. All these achievements demonstrate that the recent advances have paved the way to experimentally simulate the paradigmatic models of open quantum system, which is one part of the newly emerging field of quantum simulators [29].…”

On-demand semiconductor single-photon source with near-unity indistinguishability

“…However, the photon extraction efficiency needs to be drastically improved for it to become a deterministic While excitation-induced damping of the Rabi oscillation (there has been an intense debate on its mechanism, see e.g. [37]) is visible at higher powers, a π-pulse excitation is obtained with reasonable quality. Our current work only focuses on the π-pulse regime.…”

Temperature-Dependent Mollow Triplet Spectra from a Single Quantum Dot: Rabi Frequency Renormalization and Sideband Linewidth Insensitivity

“…As the intensity of the pump laser increases, however, an additional power dependent dephasing contribution arises, even at low temperatures [14][15][16][17][18][19][20][21][22][23][24]. This is often termed excitation induced dephasing (EID), which commonly originates from deformation potential coupling of QD excitons to longitudinal acoustic (LA) phonons.…”

“…Indistinguishable photons can be produced by s-shell resonant optical excitation of a single QD [10][11][12], wherein an electron-hole pair is created directly without any relaxation from higher states, which would otherwise cause inhomogeneous broadening in the QD emission spectrum. The coherence time (T 2 ) of such photons is able to approach the Fourier transform limit, T 2 ¼ 2T 1 (with T 1 the QD radiative lifetime) at low temperatures (∼4 K) and weak driving strengths [13].As the intensity of the pump laser increases, however, an additional power dependent dephasing contribution arises, even at low temperatures [14][15][16][17][18][19][20][21][22][23][24]. This is often termed excitation induced dephasing (EID), which commonly originates from deformation potential coupling of QD excitons to longitudinal acoustic (LA) phonons.…”