Drop experiments on crystallization of InGaSb semiconductor

Hayakawa, Y.; Balakrishnan, Kalpana; Komatsu, Hideki; Murakami, Noriaki; Nakamura, Tetsuo; Koyama, Tadanobu; Ozawa, Tomohiro; Okano, Yasunori; Miyazawa, Masatoshi; Dost, S.; Dao, Lê H.; Kumagawa, Masashi

doi:10.1016/s0022-0248(01)02103-0

Cited by 15 publications

(8 citation statements)

References 10 publications

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“…Although In x Ga 1Àx Sb crystals have been grown on earth, it is extremely difficult to grow high-quality crystals under terrestrial conditions because, as the densities of the components are different, solute transport occurs due to buoyancy. Many studies have employed microgravity conditions [4][5][6] or terrestrial condition under high magnetic fields in order to avoid gravity-induced negative effects [7]. However, the growth of bulk good-quality crystals remains an experimentally difficult task due to problems related to chemical segregation and mechanical stresses associated with the significant difference (12.5%) between the tetrahedral radii of Ga and In [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence study of InxGa1−xSb crystals grown by the Bridgman method

Chioncel

Dı́az-Guerra

Piqueras

et al. 2004

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Cathodoluminescence study of InxGa1−xSb crystals grown by the Bridgman method

Chioncel

Dı́az-Guerra

Piqueras

et al. 2004

Journal of Crystal Growth

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“…15 Our group has also carried out microgravity experiments in a drop tower, space shuttle, and Chinese recoverable satellite in which the formation of a projection during solidification, needle crystal formation, growth morphology, composition distribution, and melt mixing were explained. [16][17][18] We analysed the effect of substrate orientation on the morphological change of the solid-liquid interface, and the orientation dependence of the step kinetic coefficient at the GaP/GaP interface was reported earlier. 19 A numerical model was developed to evaluate the effect of crystal orientation on the growth rate.…”

Section: Introductionmentioning

confidence: 99%

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

et al. 2016

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InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb were analysed. The dissolution of GaSb(111)B was greater than that of (111)A, which was found from the remaining undissolved seed and feed crystals. The higher dissolution of the Sb face was explained based on the number of atoms at that face, and its bonding with the next atomic layer. The growth interface shape was almost flat in both cases. The indium composition in both InGaSb samples was uniform in the radial direction and it gradually decreased along the growth direction because of segregation. The growth rate of InGaSb from GaSb (111)B was found to be higher than that of GaSb (111)A because of the higher dissolution of GaSb (111)B.

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“…The effects of diffusion and Marangoni convection on the mixing of multi-component melts were investigated using sandwich samples of In/GaSb/Sb in the space shuttle [9][10][11]. In the drop tower experiments, the in situ solidification process under microgravity was observed using a CCD camera [12]. The effect of gravity on the shape of liquid-solid interface and composition profiles were clarified by comparing the experimental results on the Chinese recoverable satellite and on the earth [13,14].…”

Section: Introductionmentioning

confidence: 99%