“…In each of the three steps, I-line UV contact lithography is used to transfer the mask layout into an 10-m-thick UV sensitive resist layer ͑AZ4562 standard resist͒, on top of the Si wafer. The resist functions as an etch mask in the subsequent DRIE process optimized for deep etching ͓etch: SF 6 : 230 SCCM ͑SCCM denotes cubic centimeter per minute at STP͒, O 2 : 23 SCCM, rf coil: 2800 W, rf platen: 19 W, cycle time: 8 s. Passivation: C 4 F 4 : 120 SCCM, rf coil: 1000 W, rf platen: 0 W, cycle time: 5 s.͒. The window and the backside hole are fabricated in the two first masking steps, and in the case of the substrate wafer, the channel structures are subsequently fabricated in a third masking step.…”