We have fabricated a centimeter-size single-layer graphene device, with a gate electrode, which can modulate the transmission of terahertz and infrared waves. Using time-domain terahertz spectroscopy and Fourier-transform infrared spectroscopy in a wide frequency range (10-10000 cm -1 ), we measured the dynamic conductivity change induced by electrical gating and thermal annealing.Both methods were able to effectively tune the Fermi energy, E F , which in turn modified the Drude-like intraband absorption in the terahertz as well as the '2E F onset' for interband absorption in the midinfrared. These results not only provide fundamental insight into the electromagnetic response of Dirac fermions in graphene but also demonstrate the key functionalities of large-area graphene devices that are desired for components in terahertz and infrared optoelectronics.
KEYWORDS: graphene, Fermi level, terahertz dynamics, infrared spectroscopyThe AC dynamics of Dirac fermions in graphene have attracted much recent attention. The influence of linear dispersions, two-dimensionality, electron-electron interactions, and disorder on the dynamic conductivity, σ(ω), has been theoretically investigated, 1-11 whereas unique terahertz (THz) and mid-infrared (MIR) properties have been identified for novel optoelectronic applications. 12-17 For example, it has been predicted that the response of Dirac fermions to an applied AC electric field of frequency ω would automatically contain all odd harmonics of (2n+1)ω, where n is an integer, implying extremely high nonlinearity. 13,14 Furthermore, creation of electrons and holes through interband optical pumping is expected to lead to population inversion near the Dirac point, resulting in negative σ(ω), or gain, in the THz to MIR range. 12,17 While initial experimental investigations on graphene have concentrated on DC characteristics, these recent theoretical studies have instigated a flurry of new experimental activities to uncover unusual AC properties. A number of experiments have already confirmed the so-called universal optical conductivity σ 0 = e 2 /4 ! (e: electronic charge and ! : reduced Planck constant) for interband transitions in a wide spectral range. [18][19][20][21] On the other hand, experimental studies of the intraband conductivity have been very limited, [21][22][23][24] Here, we describe our THz and MIR spectroscopy study of large-area (centimeter scale), single-layer graphene with an electrically tunable Fermi level. In a field-effect transistor configuration consisting of graphene on a SiO 2 /p-Si substrate, the transmitted intensity of THz and MIR electromagnetic waves was observed to change with the gate voltage. The Drude-like intraband conductivities and the '2E F onset' of the interband transitions, monitored through time-domain THz spectroscopy (TDTS) and Fourier-transform IR (FTIR) spectroscopy, respectively, were both modulated by the gate voltage. By analyzing the spectral shape of the induced changes with appropriate models, we were able to determine ...